Semiconductor device
First Claim
1. A semiconductor device comprising:
- a first transistor having a first terminal and a second terminal;
a second transistor having a first terminal and a second terminal;
a third transistor having a gate, a first terminal and a second terminal;
an amplifier circuit having a first input terminal, a second input terminal and an output terminal; and
a current source circuit,wherein the first terminal of the first transistor is electrically connected to the first input terminal of the amplifier circuit and the current source circuit,wherein the second terminal of the first transistor is electrically connected to the first terminal of the third transistor,wherein the first terminal of the second transistor is electrically connected to the output terminal of the amplifier circuit, andwherein the second terminal of the second transistor is electrically connected to the gate of the third transistor.
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Accused Products
Abstract
A semiconductor device is provided in which a transistor which supplies a current to a load (an EL pixel and a signal line) can supply an accurate current without being affected by a variation. A voltage of each terminal of a transistor is controlled by using a feedback circuit using an amplifier circuit. A current Idata is inputted from a current source circuit to a transistor and a gate-source voltage (a source potential) required for the transistor to flow the current Idata is set by using the feedback circuit. The feedback circuit is controlled to operate so that a drain potential of the transistor becomes a predetermined potential. Then, a gate voltage required to flow the current Idata is set. By using the set transistor, an accurate current can be supplied to the load (an EL element and a signal line). As a drain potential can be controlled, the kink effect can be reduced.
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Citations
10 Claims
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1. A semiconductor device comprising:
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a first transistor having a first terminal and a second terminal; a second transistor having a first terminal and a second terminal; a third transistor having a gate, a first terminal and a second terminal; an amplifier circuit having a first input terminal, a second input terminal and an output terminal; and a current source circuit, wherein the first terminal of the first transistor is electrically connected to the first input terminal of the amplifier circuit and the current source circuit, wherein the second terminal of the first transistor is electrically connected to the first terminal of the third transistor, wherein the first terminal of the second transistor is electrically connected to the output terminal of the amplifier circuit, and wherein the second terminal of the second transistor is electrically connected to the gate of the third transistor. - View Dependent Claims (2, 3, 4)
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5. A semiconductor device comprising:
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a first transistor having a first terminal and a second terminal; a second transistor having a first terminal and a second terminal; a third transistor having a gate, a first terminal and a second terminal; a fourth transistor having a first terminal and a second terminal; an amplifier circuit having a first input terminal, a second input terminal and an output terminal; and a current source circuit, wherein the first terminal of the first transistor is electrically connected to the first input terminal of the amplifier circuit and the current source circuit, wherein the second terminal of the first transistor is electrically connected to the first terminal of the third transistor and a first terminal of the fourth transistor, wherein the first terminal of the second transistor is electrically connected to the output terminal of the amplifier circuit, and wherein the second terminal of the second transistor is electrically connected to the gate of the third transistor. - View Dependent Claims (6, 7, 8, 9, 10)
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Specification