Method for manufacture of semiconductor bearing thin film material

• US 8,287,942 B1
• Filed: 09/24/2008
• Issued: 10/16/2012
• Est. Priority Date: 09/28/2007
• Status: Expired due to Fees

• Current Assignee: Stion Corporation
• Original Assignee: Stion Corporation
• Inventors: Huang, Jinman, Lee, Howard W. H.
• Primary Examiner(s): Orlando, Michael
• Application Number:
  US12/237,377
• Time in Patent Office: 1,483 Days
• Field of Search: 427/74
• US Class Current: 427/74
• CPC Class Codes: C23C 18/1204 inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
• CPC Class Codes: C23C 18/1275 performed under inert atmosphere
• CPC Class Codes: C23C 18/1283 Control of temperature, e.g. gradual temperature increase, modulation of temperature
• CPC Class Codes: H01L 31/0296 including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
• CPC Class Codes: H01L 31/032 including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
• CPC Class Codes: H01L 31/1828 the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
• CPC Class Codes: H01L 31/1864 Annealing
• CPC Class Codes: Y02E 10/543 Solar cells from Group II-VI materials
• CPC Class Codes: Y02P 70/50 Manufacturing or production processes characterised by the final manufactured product

Abstract

A method for forming a semiconductor bearing thin film material. The method includes providing a metal precursor and a chalcogene precursor. The method forms a mixture of material comprising the metal precursor, the chalcogene precursor and a solvent material. The mixture of material is deposited overlying a surface region of a substrate member. In a specific embodiment, the method maintains the substrate member including the mixture of material in an inert environment and subjects the mixture of material to a first thermal process to cause a reaction between the metal precursor and the chalcogene material to form a semiconductor metal chalcogenide bearing material overlying the substrate member. The method then performs a second thermal process to remove any residual solvent and forms a substantially pure semiconductor metal chalcogenide thin film material overlying the substrate member.

Claims

1. A method for forming semiconductor bearing thin film material, the method comprising:

providing a zinc-containing precursor;

providing a sulfur-containing precursor;

forming a mixture of material comprising the zinc-containing precursor, the sulfur-containing precursor and a solvent material;

depositing the mixture of material overlying a surface region of a substrate member,

maintaining the substrate member including the mixture of material in an inert environment;

subjecting the mixture of material to a first thermal process to form a semiconductor zinc-sulfide containing thin film material overlying the surface region of the substrate member; and

subjecting the semiconductor zinc-sulfide containing thin film material to a second thermal process to form a substantially pure semiconductor thin film material consisting of zinc sulfide, wherein the zinc sulfide comprises a bandgap energy of about 94.6% or greater compared to a bulk zinc sulfide film.

2. The method of claim 1 wherein the solvent material is selected from the group consisting of ethanol, ethanolamine, methoxyethanol, tetrahydrofuran, and ethylene glycol.

3. The method of claim 1 wherein the first thermal process is provided at a temperature ranging from about 80 Degree Celsius to about 90 Degree Celsius.

4. The method of claim 1 wherein the inert environment is provided using nitrogen, argon, or helium.

5. The method of claim 1 wherein the second thermal process is provided at a temperature of about 300 Degree Celsius and higher.

6. The method of claim 1 wherein the depositing step comprises a solution deposition process including a spin on process, a doctor blade process, a dip coating process, a spraying process, an screen printing process, or an inkjet process.

7. The method of claim 1 wherein the substrate member is a transparent substrate.

8. The method of claim 7 wherein the transparent substrate is selected from glass, fused silica, and quartz.

9. The method of claim 1 wherein the substrate member is a metal.

10. The method of claim 9 wherein the substrate member is a metal selected from stainless steel, aluminum, and nickel.

11. The method of claim 1 wherein the substrate member is a semiconductor material selected from silicon, silicon germanium, germanium, II-VI compound semiconductors, III-V compound semiconductors, and silicon on insulator.

12. The method of claim 1 wherein the substrate member is a multilayer material.

13. The method of claim 1 wherein the substrate member is a polymer.

14. The method of claim 1 wherein the zinc precursor is selected from zinc acetate, zinc methacrylate, zinc acrylate, zinc acetylacetonate, zinc chloride, and zinc nitrate.

15. The method of claim 1 wherein the sulfur precursor is selected from thiourea, thiols, thioethers, thioaceamides, and thiosulfates.

16. The method of claim 1 wherein the solvent material comprises methoxyethanol and ethanolamine.

17. The method of claim 1 wherein the zinc sulfide material is characterized by a bandgap of about 3.66 eV.