Light emitting diode and fabricating method thereof

• US 8,288,181 B2
• Filed: 07/09/2010
• Issued: 10/16/2012
• Est. Priority Date: 01/21/2005
• Status: Active Grant

• Current Assignee: Epistar Corporation
• Original Assignee: Epistar Corporation
• Inventors: Tsai, Tzong-Liang, Wen, Way-Jze, Chiang, Chang-Han, Chang, Chih-Sung
• Primary Examiner(s): GEBREMARIAM, SAMUEL A
• Application Number:
  US12/833,648
• Publication Number:
  US 20100279443A1
• Time in Patent Office: 830 Days
• Field of Search: 438/22, 438/25, 438/26, 438/27, 438/29
• US Class Current: 438/22
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating

Abstract

A light emitting diode and its fabricating method are disclosed. A light emitting diode epitaxy structure is formed on a substrate, and then the light emitting diode epitaxy structure is etched to form a recess. The recess is then filled with a transparent dielectric material. An adhesive layer is utilized to adhere a conductive substrate and the light emitting diode epitaxy structure. Next, the substrate is removed.

Claims

1. A method of fabricating a light emitting diode, comprising:

providing a substrate;

forming a light emitting diode epitaxy structure on the substrate;

etching the light emitting diode epitaxy structure to form a recess;

forming a transparent dielectric layer only in the recess;

forming an adhesive layer on a conductive substrate, wherein the adhesive layer is electrically connected with the conductive substrate; and

bonding the conductive substrate to the light emitting diode epitaxy structure after forming the adhesive layer on the conductive substrate.

2. The method of claim 1, wherein the transparent dielectric layer comprises a material selected from a group consisting of SiO2, Si3N4, bisbenzocyclobutene and polyimide.

3. The method of claim 1, wherein the adhesive layer comprises a material selected from a group consisting of Au, Sn, In, Ag, Ge, Cu, Pb and an alloy thereof.

4. The method of claim 1, wherein the step of forming the light emitting diode epitaxy structure comprises:

forming a first doped semiconductor layer on the substrate;

forming an active layer on the first doped semiconductor layer; and

forming a second doped semiconductor layer on the active layer.

5. The method of claim 1, wherein the step of etching the light emitting diode epitaxy structure exposes the substrate.

6. The method of claim 1, further comprising forming an anode on the top of the light emitting diode epitaxy structure wherein the anode is disposed in the middle at the top of the light emitting diode epitaxial structure.

7. The method of claim 1, wherein the step of forming the transparent dielectric layer only in the recess comprises filling up the recess with the transparent dielectric layer.

8. The method of claim 1, further comprising removing the substrate after bonding the conductive substrate to the light emitting diode epitaxy structure.

9. The method of claim 8, wherein the step of removing the substrate comprises irradiating a laser beam on the substrate.

10. A method of fabricating a light emitting diode, comprising:

providing a first substrate;

forming a light emitting diode epitaxy structure on the first substrate;

removing a portion of the light emitting diode epitaxy structure to form a recess;

forming a transparent dielectric layer only in the recess;

providing a second substrate;

forming an adhesive layer on the second substrate, wherein the adhesive layer is electrically connected with the second substrate; and

bonding the second substrate to the light emitting diode epitaxy structure after forming the adhesive layer on the second substrate.

11. The method of claim 10, wherein the transparent dielectric layer comprises a material selected from a group consisting of SiO2, Si3N4, bisbenzocyclobutene and polyimide.

12. The method of claim 10, wherein the adhesive layer comprises a material selected from a group consisting of Au, Sn, In, Ag, Ge, Cu, Pb and an alloy thereof.

13. The method of claim 10, wherein the step of forming the light emitting diode epitaxy structure comprises:

forming a first doped semiconductor layer on the substrate;

forming an active layer on the first doped semiconductor layer; and

forming a second doped semiconductor layer on the active layer.

14. The method of claim 10, wherein the step of removing a portion of the light emitting diode epitaxy structure exposes the first substrate.

15. The method of claim 10, wherein the second substrate is a conductive substrate.

16. The method of claim 10, wherein the step of forming the transparent dielectric layer only in the recess comprises filling up the recess with the transparent dielectric layer.

17. The method of claim 10, further comprising forming an anode on the top of the light emitting diode epitaxy structure, wherein the anode is disposed in the middle at the top of the light emitting diode epitaxy structure.

18. The method of claim 10, further comprising removing the first substrate after bonding the second substrate to the light emitting diode epitaxy structure.

19. The method of claim 18, wherein the step of removing the first substrate comprises irradiating a laser beam on the first substrate.