Three dimensional structure memory

• US 8,288,206 B2
• Filed: 07/04/2009
• Issued: 10/16/2012
• Est. Priority Date: 04/04/1997
• Status: Expired due to Fees

• Current Assignee: Elm 3DS Innovations LLC
• Original Assignee: ELM TECHNOLOGY CORPORATION
• Inventors: Leedy, Glenn J.
• Primary Examiner(s): Picardat, Kevin M
• Application Number:
  US12/497,654
• Publication Number:
  US 20100173453A1
• Time in Patent Office: 1,200 Days
• Field of Search: 438106-109, 438/618, 438/622, 438/637, 365/51, 365/63
• US Class Current: 438/109
• CPC Class Codes: G11C 5/02 Disposition of storage elements, e.g. in the form of a matrix array
• CPC Class Codes: G11C 5/06 Arrangements for interconnecting storage elements electrically, e.g. by wiring
• CPC Class Codes: H01L 21/76898 formed through a semiconductor substrate
• CPC Class Codes: H01L 2224/8083 Solid-solid interdiffusion
• CPC Class Codes: H01L 2224/8384 Sintering
• CPC Class Codes: H01L 23/481 Internal lead connections, e.g. via connections, feedthrough structures
• CPC Class Codes: H01L 23/5226 Via connections in a multilevel interconnection structure
• CPC Class Codes: H01L 25/0657 Stacked arrangements of devices
• CPC Class Codes: H01L 27/0688 Integrated circuits having a three-dimensional layout
• CPC Class Codes: H01L 29/02 Semiconductor bodies ; Multistep manufacturing processes therefor
• CPC Class Codes: H01L 2924/01079 Gold [Au]
• CPC Class Codes: H10B 12/50 Peripheral circuit region structures
• CPC Class Codes: Y10S 438/977 Thinning or removal of substrate

Abstract

A Three-Dimensional Structure (3DS) Memory allows for physical separation of the memory circuits and the control logic circuit onto different layers such that each layer may be separately optimized. One control logic circuit suffices for several memory circuits, reducing cost. Fabrication of 3DS memory involves thinning of the memory circuit to less than 50 μm in thickness and bonding the circuit to a circuit stack while still in wafer substrate form. Fine-grain high density inter-layer vertical bus connections are used. The 3DS memory manufacturing method enables several performance and physical size efficiencies, and is implemented with established semiconductor processing techniques.

Claims

1. A method of making a circuit structure comprising:

forming from a semiconductor wafer or portion thereof a first unitary substrate with a first surface;

forming from a semiconductor wafer or portion thereof a second unitary substrate with a first surface and a second surface, wherein the second surface is opposite said first surface of the second unitary substrate;

forming a dielectric layer over the first surface of at least one of the first and second unitary substrates, the dielectric layer having a stress of 5×

10⁸ dynes/cm² or less;

bonding the first surface of the first unitary substrate to one of the first surface and the second surface of the second unitary substrate;

thinning the second unitary substrate to form the second surface; and

,

forming at least one vertical interconnection, wherein the at least one vertical interconnection extends vertically through the second unitary substrate, and forming a dielectric material having a stress of about 5×

10⁸ dynes/cm² or less isolating the vertical interconnection from said second unitary substrate.

2. The method of claim 1, further comprising:

forming from a semiconductor wafer or portion thereof a third unitary substrate with a first surface having interconnect contacts; and

bonding the first surface of the third unitary substrate to the second surface of the second unitary substrate.

3. The method of claim 2, further comprising the step of forming a connection between the at least one vertical interconnection and at least one of the interconnect contacts of the first surface of the third unitary substrate.

4. The method of claim 1, further comprising forming of interconnect contacts at least one of on, within and beneath the second surface of the second unitary substrate.

5. The method of claim 1, wherein the bonding of the first surface of the first unitary substrate to the first surface of the second unitary substrate is performed before the thinning of the second surface of the second unitary substrate.

6. The method of claim 1, wherein the bonding of the first surface of the first unitary substrate to the first surface of the second unitary substrate is performed after the thinning of the second unitary substrate.

7. The method of claim 1, wherein said at least one vertical interconnection is formed through the second unitary substrate, in whole or in part from the first surface of the second unitary substrate, or in whole or in part from the second surface of the second unitary substrate.

8. The method of claim 1, further comprising thinning the second unitary substrate to a thickness of less than 50 microns.

46. The method of claim 1, comprising forming a dielectric layer over one of the surfaces of at least one of the first and second unitary substrates, the dielectric layer having a stress of 5×

10⁸ dynes/cm² or less.

47. The method of claim 46, wherein the dielectric layer comprises at least one of silicon dioxide, silicon nitride, an oxide of silicon, and a nitride of silicon.

60. The method of claim 1, wherein the dielectric material comprises at least one of silicon dioxide, silicon nitride, an oxide of silicon, and a nitride of silicon.

67. The method of claim 1, wherein thinning comprises parting the second unitary substrate at a parting layer.

68. The method of claim 67, wherein the parting layer comprises implanted hydrogen species.

81. The method of claim 1, further comprising at least two of the following:

forming from a semiconductor wafer or portion thereof a third unitary substrate with a first surface having interconnect contacts, and bonding the first surface of the third unitary substrate to the second surface of the second unitary substrate;

forming a connection between the at least one vertical interconnection and at least one of the interconnect contacts of the first surface of the third unitary substrate;

forming of interconnect contacts at least one of on, within and beneath the second surface of the second unitary substrate;

performing the bonding of the first surface of the first unitary substrate to the first surface of the second unitary substrate before the thinning of the second surface of the second unitary substrate;

performing the bonding of the first surface of the first unitary substrate to the first surface of the second unitary substrate after the thinning of the second unitary substrate;

wherein said at least one vertical interconnection is formed through the second unitary substrate, in whole or in part from the first surface of the second unitary substrate, or in whole or in part from the second surface of the second unitary substrate;

thinning the second unitary substrate to a thickness of less than 50 microns;

wherein thinning comprises parting the second unitary substrate at a parting layer;

wherein thinning comprises parting the second unitary substrate at a parting layer comprising implanted hydrogen species;

performing at least one of polishing and Chemical Mechanical Polishing to make one of the first and second unitary substrates substantially flexible.

88. The method of claim 1, comprising performing at least one of polishing and Chemical Mechanical Polishing of the second surface of at least one of the first unitary substrate and the second unitary substrate to make the unitary substrate substantially flexible.

9. A method of making a circuit structure comprising:

forming from a semiconductor wafer or portion thereof a first unitary substrate with a first surface;

forming from a semiconductor wafer or portion thereof a second unitary substrate with a first surface and a second surface, wherein the second surface is opposite said first surface of the second unitary substrate;

bonding the first surface of the first unitary substrate to the first surface of the second unitary substrate;

thinning the second unitary substrate to form the second surface;

depositing a dielectric layer on the second surface of the second unitary substrate having a stress of about 5×

10⁸ dynes/cm² or less; and

,

forming at least one vertical interconnection, wherein the at least one vertical interconnection extends vertically through the second unitary substrate, and forming a dielectric material having a stress of about 5×

10⁸ dynes/cm² or less isolating the vertical interconnection from said second unitary substrate.

10. The method of claim 9, further comprising:

forming from a semiconductor wafer or portion thereof a third unitary substrate with a first surface having interconnect contacts; and

bonding the first surface of the third unitary substrate to the second surface of the second unitary substrate.

11. The method of claim 10, wherein each of the first unitary substrate and the second unitary substrate is provided with interconnect contacts, further comprising the step of forming at least one vertical interconnection between at least one of:

interconnect contacts of the first and the second unitary substrates;

interconnect contacts of the first and the third unitary substrates; and

interconnect contacts of the second and the third unitary substrates.

12. The method of claim 9, further comprising forming of interconnect contacts at least one of on, within and beneath the second surface of the second unitary substrate.

13. The method of claim 9, wherein the bonding of the first surface of the first unitary substrate to the first surface of the second unitary substrate is performed before the thinning of the second unitary substrate.

14. The method of claim 9, wherein the bonding of the first surface of the first unitary substrate to the first surface of the second unitary substrate is performed after the thinning of the second unitary substrate.

15. The method of claim 9, wherein said at least one vertical interconnection is formed through the second unitary substrate one of in whole or in part from the first surface of the second unitary substrate and one of in whole or in part from the second surface of the second unitary substrate.

16. The method of claim 9, further comprising thinning the second unitary substrate to a thickness of less than 50 microns.

48. The method of claim 9, comprising forming a dielectric layer over one of the surfaces of at least one of the first and second unitary substrates, the dielectric layer having a stress of 5×

10⁸ dynes/cm² or less.

49. The method of claim 48, wherein the dielectric layer comprises at least one of silicon dioxide, silicon nitride, an oxide of silicon, and a nitride of silicon.

61. The method of claim 9, wherein the dielectric material comprises at least one of silicon dioxide, silicon nitride, an oxide of silicon, and a nitride of silicon.

69. The method of claim 9, wherein thinning comprises parting the second unitary substrate at a parting layer.

70. The method of claim 69, wherein the parting layer comprises implanted hydrogen species.

82. The method of claim 9, further comprising at least two of the following:

forming from a semiconductor wafer or portion thereof a third unitary substrate with a first surface having interconnect contacts, and bonding the first surface of the third unitary substrate to the second surface of the second unitary substrate;

forming at least one vertical interconnection between at least one of;

interconnect contacts of the first and the second unitary substrates, interconnect contacts of the first and the third unitary substrates, and interconnect contacts of the second and the third unitary substrates;

forming of interconnect contacts at least one of on, within and beneath the second surface of the second unitary substrate;

performing bonding of the first surface of the first unitary substrate to the first surface of the second unitary substrate before the thinning of the second unitary substrate;

performing the bonding of the first surface of the first unitary substrate to the first surface of the second unitary substrate after the thinning of the second unitary substrate;

wherein said at least one vertical interconnection is formed through the second unitary substrate one of in whole or in part from the first surface of the second unitary substrate and one of in whole or in part from the second surface of the second unitary substrate;

thinning the second unitary substrate to a thickness of less than 50 microns;

wherein thinning comprises parting the second unitary substrate at a parting layer;

wherein thinning comprises parting the second unitary substrate at a parting layer comprising implanted hydrogen species;

performing at least one of polishing and Chemical Mechanical Polishing to make one of the first and second unitary substrates substantially flexible.

89. The method of claim 9, comprising performing at least one of polishing and Chemical Mechanical Polishing of the second surface of at least one of the first unitary substrate and the second unitary substrate to make the unitary substrate substantially flexible.

17. A method of making a circuit structure comprising:

forming from a semiconductor wafer or portion thereof a first unitary substrate with a first surface;

forming from a semiconductor wafer or portion thereof a second unitary substrate with a first surface and a second surface, wherein the second surface is opposite said first surface of the second unitary substrate;

bonding the first surface of the first unitary substrate to the first surface of the second unitary substrate;

thinning the second unitary substrate to form the second surface; and

,

forming at least one vertical interconnection, wherein the said at least one vertical interconnection is formed in whole or in part from the first surface of the second unitary substrate, or in whole or in part from the second surface of the second unitary substrate, wherein the at least one vertical interconnection extends vertically through the second unitary substrate, and forming a dielectric material having a stress of about 5×

10⁸ dynes/cm² or less isolating the vertical interconnection from said second unitary substrate.

18. The method of claim 17, further comprising:

forming from a semiconductor wafer or portion thereof a third unitary substrate with a first surface having interconnections; and

bonding the first surface of the third unitary substrate to the second surface of the second unitary substrate.

19. The method of claim 18, further comprising the step of forming a connection between the at least one vertical interconnection and at least one of the interconnections of first surface of the third unitary substrate.

20. The method of claim 17, further comprising forming of interconnections at least one of on, within and beneath the second surface of the second unitary substrate.

21. The method of claim 17, wherein the bonding of the first surface of the first unitary substrate to the first surface of the second unitary substrate is performed before the thinning of the second unitary substrate.

22. The method of claim 17, wherein the bonding of the first surface of the first unitary substrate to the first surface of the second unitary substrate is performed after the thinning of the second unitary substrate.

23. The method of claim 17, further comprising thinning the second unitary substrate to a thickness of less than 50 microns.

50. The method of claim 17, comprising forming a dielectric layer over one of the surfaces of at least one of the first and second unitary substrates, the dielectric layer having a stress of 5×

10⁸ dynes/cm² or less.

51. The method of claim 50, wherein the dielectric layer comprises at least one of silicon dioxide, silicon nitride, an oxide of silicon, and a nitride of silicon.

62. The method of claim 17, wherein the dielectric material comprises at least one of silicon dioxide, silicon nitride, an oxide of silicon, and a nitride of silicon.

71. The method of claim 17, wherein thinning comprises parting the second unitary substrate at a parting layer.

72. The method of claim 71, wherein the parting layer comprises implanted hydrogen species.

83. The method of claim 17, further comprising at least two of the following:

forming from a semiconductor wafer or portion thereof a third unitary substrate with a first surface having interconnections, and bonding the first surface of the third unitary substrate to the second surface of the second unitary substrate;

forming a connection between the at least one vertical interconnection and at least one of the interconnections of first surface of the third unitary substrate;

forming of interconnections at least one of on, within and beneath the second surface of the second unitary substrate;

performing the bonding of the first surface of the first unitary substrate to the first surface of the second unitary substrate before the thinning of the second unitary substrate;

performing the bonding of the first surface of the first unitary substrate to the first surface of the second unitary substrate after the thinning of the second unitary substrate;

thinning the second unitary substrate to a thickness of less than 50 microns;

wherein thinning comprises parting the second unitary substrate at a parting layer;

wherein thinning comprises parting the second unitary substrate at a parting layer comprising implanted hydrogen species;

performing at least one of polishing and Chemical Mechanical Polishing to make one of the first and second unitary substrates substantially flexible.

90. The method of claim 17, comprising performing at least one of polishing and Chemical Mechanical Polishing of the second surface of at least one of the first unitary substrate and the second unitary substrate to make the unitary substrate substantially flexible.

24. A method of making a circuit structure comprising:

forming from a semiconductor wafer or portion thereof a first unitary substrate with a first surface;

forming from a semiconductor wafer or portion thereof a second unitary substrate with a first surface, and a second surface, wherein the second surface is opposite said first surface of the second unitary substrate;

bonding the first surface of the first unitary substrate to one of the first surface and the second surface of the second unitary substrate;

thinning the second unitary substrate to form the second surface;

depositing a dielectric layer on the second surface of the second unitary substrate having a stress of about 5×

10⁸ dynes/cm² or less; and

,

forming at least one vertical interconnection, wherein said at least one vertical interconnection is formed in whole or in part from the first surface of the second unitary substrate, or in whole or in part from the second surface of the second unitary substrate, wherein the at least one vertical interconnection extends vertically through the second unitary substrate, and forming a dielectric material having a stress of about 5×

10⁸ dynes/cm² or less isolating the vertical interconnection from said second unitary substrate.

25. The method of claim 24, further comprising:

forming from a semiconductor wafer or portion thereof a third unitary substrate with a first surface having interconnections; and

bonding the first surface of the third unitary substrate to the second surface of the second unitary substrate.

26. The method of claim 25, further comprising the step of forming a connection between the at least one vertical interconnection and at least one of the interconnections of first surface of the third unitary substrate.

27. The method of claim 24, further comprising forming of interconnections at least one of on, within and beneath the second surface of the second unitary substrate.

28. The method of claim 24, further comprising thinning the second unitary substrate to a thickness of less than 50 microns.

52. The method of claim 24, comprising forming a dielectric layer over one of the surfaces of at least one of the first and second unitary substrates, the dielectric layer having a stress of 5×

10⁸ dynes/cm² or less.

53. The method of claim 52, wherein the dielectric layer comprises at least one of silicon dioxide, silicon nitride, an oxide of silicon, and a nitride of silicon.

63. The method of claim 24, wherein the dielectric material comprises at least one of silicon dioxide, silicon nitride, an oxide of silicon, and a nitride of silicon.

73. The method of claim 24, wherein thinning comprises parting the second unitary substrate at a parting layer.

74. The method of claim 73, wherein the parting layer comprises implanted hydrogen species.

84. The method of claim 24, further comprising at least two of the following:

forming from a semiconductor wafer or portion thereof a third unitary substrate with a first surface having interconnections, and bonding the first surface of the third unitary substrate to the second surface of the second unitary substrate;

forming a connection between the at least one vertical interconnection and at least one of the interconnections of first surface of the third unitary substrate;

forming of interconnections at least one of on, within and beneath the second surface of the second unitary substrate;

thinning the second substrate to a thickness of less than 50 microns;

wherein thinning comprises parting the second unitary substrate at a parting layer;

wherein thinning comprises parting the second unitary substrate at a parting layer comprising implanted hydrogen species;

performing at least one of polishing and Chemical Mechanical Polishing to make one of the first and second unitary substrates substantially flexible.

91. The method of claim 24, comprising performing at least one of polishing and Chemical Mechanical Polishing of the second surface of at least one of the first unitary substrate and the second unitary substrate to make the unitary substrate substantially flexible.

29. A method of making a circuit structure comprising:

forming from a semiconductor wafer or portion thereof a first unitary substrate with a first surface having one or more integrated circuits formed thereon;

forming from a semiconductor wafer or portion thereof a second unitary substrate with a first surface having one or more integrated circuits formed thereon and a second surface, wherein the second surface is opposite said first surface of the second unitary substrate;

bonding the first surface of the first unitary substrate to the one of first surface and the second surface of the second unitary substrate;

thinning the second unitary substrate to form the second surface; and

,

forming at least one vertical interconnection, wherein the said at least one vertical interconnection is formed in whole or in part from the first surface of the second unitary substrate, or in whole or in part from the second surface of the second unitary substrate, wherein the at least one vertical interconnection extends vertically through the second unitary substrate, and forming a dielectric material having a stress of about 5×

10⁸ dynes/cm² or less isolating the vertical interconnection from said second unitary substrate.

30. The method of claim 29, further comprising:

forming from a semiconductor wafer or portion thereof a third unitary substrate with a first surface having one or more integrated circuits formed thereon; and

bonding the first surface of the third unitary substrate to the second surface of the second unitary substrate.

31. The method of claim 30, further comprising the step of forming an interconnection between at least one of the one or more integrated circuits of the first surface of the second unitary substrate and at least one of the one or more integrated circuits of first surface of the third unitary substrate.

32. The method of claim 29, further comprising forming of interconnections at least one of on, within and beneath the second surface of the second unitary substrate.

33. The method of claim 30, further comprising forming of interconnections at least one of on, within and beneath the second surface of the third unitary substrate.

34. The method of claim 29, further comprising thinning the second unitary substrate to a thickness of less than 50 microns.

54. The method of claim 29, comprising forming a dielectric layer over one of the surfaces of at least one of the first and second unitary substrates, the dielectric layer having a stress of 5×

10⁸ dynes/cm² or less.

55. The method of claim 54, wherein the dielectric layer comprises at least one of silicon dioxide, silicon nitride, an oxide of silicon, and a nitride of silicon.

64. The method of claim 29, wherein the dielectric material comprises at least one of silicon dioxide, silicon nitride, an oxide of silicon, and a nitride of silicon.

75. The method of claim 29, wherein thinning comprises parting the second unitary substrate at a parting layer.

76. The method of claim 75, wherein the parting layer comprises implanted hydrogen species.

85. The method of claim 29, further comprising at least two of the following:

forming from a semiconductor wafer or portion thereof a third unitary substrate with a first surface having one or more integrated circuits formed thereon, and bonding the first surface of the third unitary substrate to the second surface of the second unitary substrate;

forming an interconnection between at least one of the one or more integrated circuits of the first surface of the second unitary substrate and at least one of the one or more integrated circuits of first surface of the third unitary substrate;

forming of interconnections at least one of on, within and beneath the second surface of the second unitary substrate;

forming of interconnections at least one of on, within and beneath the second surface of the third unitary substrate;

thinning the second unitary substrate to a thickness of less than 50 microns;

forming a dielectric layer over a surface of at least one of the first and second unitary substrates, the dielectric layer having a stress of 5×

10⁸ dynes/cm² or less;

wherein thinning comprises parting the second unitary substrate at a parting layer;

wherein thinning comprises parting the second unitary substrate at a parting layer comprising implanted hydrogen species;

performing at least one of polishing and Chemical Mechanical Polishing to make one of the first and second unitary substrates substantially flexible.

92. The method of claim 29, comprising performing at least one of polishing and Chemical Mechanical Polishing of the second unitary surface of at least one of the first unitary substrate and the second unitary substrate to make the unitary substrate substantially flexible.

35. A method of making a circuit structure comprising:

forming from a semiconductor wafer or portion thereof a first unitary substrate with a first surface having one or more integrated circuits formed thereon and a second surface, wherein the second surface is opposite said first surface of the first unitary substrate;

thinning the first unitary substrate to form the second surface thereof;

forming from a semiconductor wafer or portion thereof a second unitary substrate with a first surface having one or more integrated circuits formed thereon and a second surface, wherein the second surface is opposite said first surface of the second unitary substrate;

thinning the second unitary substrate to form the second surface thereof;

bonding the first surface of the second unitary substrate to the second surface of the first unitary substrate; and

forming at least one vertical interconnection, wherein the at least one vertical interconnection extends vertically through the second unitary substrate, and forming a dielectric material having a stress of about 5×

10⁸ dynes/cm² or less isolating the vertical interconnection from said second unitary substrate.

36. The method of claim 35, further comprising:

forming from a semiconductor wafer or portion thereof a third unitary substrate with a first surface having one or more integrated circuits formed thereon; and

bonding the first surface of the third unitary substrate to one of the first surface of the second unitary substrate and the second surface of the second unitary substrate.

37. The method of claim 36, further comprising the step of forming an interconnection between at least one of the one or more integrated circuits of the first surface of the second unitary substrate and at least one of the one or more integrated circuits of first surface of the third unitary substrate.

38. The method of claim 35, further comprising forming of interconnections at least one of on, within and beneath the second surface of the second unitary substrate.

39. The method of claim 36, further comprising forming of interconnections at least one of on, within and beneath the second surface of the third unitary substrate.

40. The method of claim 35, further comprising depositing a dielectric layer on the second surface of the first unitary substrate, the dielectric layer having a stress of about 5×

10⁸ dynes/cm² or less.

41. The method of claim 35, further comprising depositing a dielectric layer on the second surface of the second unitary substrate, the dielectric layer having a stress of about 5×

10⁸ dynes/cm² or less.

42. The method of claim 35, further comprising thinning the first unitary substrate to a thickness of less than 50 microns.

43. The method of claim 35, further comprising thinning the second unitary substrate to a thickness of less than 50 microns.

56. The method of claim 35, comprising forming a dielectric layer over one of the surfaces of at least one of the first and second unitary substrates, the dielectric layer having a stress of 5×

10⁸ dynes/cm² or less.

57. The method of claim 56, wherein the dielectric layer comprises at least one of silicon dioxide, silicon nitride, an oxide of silicon, and a nitride of silicon.

65. The method of claim 35, wherein the dielectric material comprises at least one of silicon dioxide, silicon nitride, an oxide of silicon, and a nitride of silicon.

77. The method of claim 35, wherein thinning comprises parting the second unitary substrate at a parting layer.

78. The method of claim 77, wherein the parting layer comprises implanted hydrogen species.

86. The method of claim 35, further comprising at least two of the following:

forming from a semiconductor wafer or portion thereof a third unitary substrate with a first surface having one or more integrated circuits formed thereon, and bonding the first surface of the third unitary substrate to one of the first surface of the second unitary substrate and the second surface of the second unitary substrate;

forming an interconnection between at least one of the one or more integrated circuits of the first surface of the second unitary substrate and at least one of the one or more integrated circuits of first surface of the third unitary substrate;

forming of interconnections at least one of on, within and beneath the second surface of the second unitary substrate;

depositing a dielectric layer on the second surface of the first unitary substrate having a stress of about 5×

10⁸ dynes/cm² or less;

depositing a dielectric layer on the second surface of the second unitary substrate having a stress of about 5×

10⁸ dynes/cm² or less;

thinning the first unitary substrate to a thickness of less than 50 microns;

thinning the second unitary substrate to a thickness of less than 50 microns;

forming a dielectric layer over a surface of at least one of the first and second unitary substrates, the dielectric layer having a stress of 5×

10⁸ dynes/cm² or less;

wherein thinning comprises parting the second unitary substrate at a parting layer;

wherein thinning comprises parting the second unitary substrate at a parting layer comprising implanted hydrogen species;

performing at least one of polishing and Chemical Mechanical Polishing to make one of the first and second unitary substrates substantially flexible.

93. The method of claim 35, comprising:

performing at least one of polishing and Chemical Mechanical Polishing of the second surface of the first unitary substrate to make the unitary substrate substantially flexible; and

performing at least one of polishing and Chemical Mechanical Polishing of the second surface of the second unitary substrate to make the unitary substrate substantially flexible.

44. A method of making a circuit structure comprising:

forming from a semiconductor wafer or portion thereof at least a first unitary substrate of a first type with a first surface having one or more integrated circuits formed thereon and a second surface, wherein the second surface is opposite said first surface of the first unitary substrate;

forming from a semiconductor wafer or portion thereof at least a first unitary substrate of a second type with a first surface having one or more integrated circuits formed thereon and a second surface, wherein the second surface is opposite said first surface of the first unitary substrate of the second type;

performing bonding of unitary substrate a surface of one of said unitary substrates to a surface of one of;

another of said unitary substrates, a second unitary substrate of said first type, and a second unitary substrate of said second type;

thinning each of the first unitary substrate of the first type and the first unitary substrate of the second type by one of before performing bonding, thinning the unitary substrate to form the second surface of the unitary substrate while the first surface thereof is bonded to a support unitary substrate with an intervening release layer; and

, after performing bonding, thinning the unitary substrate to form the second surface of the unitary substrate; and

forming at least one vertical interconnection that extends vertically through at least one of the first unitary substrate of the first type and the first unitary substrate of the second type, and forming a dielectric material having a stress of about 5×

10⁸ dynes/cm² or less isolating the vertical interconnection from a same unitary substrate.

45. The method of claim 44, comprising:

performing bonding of the second surface of the first unitary substrate of one of the first type and the second type to one of the first surface and the second surface of one of the first unitary substrate and a second unitary substrate of one of the first type and the second type;

wherein the second surface of the first unitary substrate of one of the first type and the second type is polished to make the unitary substrate substantially flexible.

58. The method of claim 44, comprising forming a dielectric layer over one of the surfaces of at least one of the first and second unitary substrates, the dielectric layer having a stress of 5×

10⁸ dynes/cm² or less.

59. The method of claim 58, wherein the dielectric layer comprises at least one of silicon dioxide, silicon nitride, an oxide of silicon, and a nitride of silicon.

66. The method of claim 44, wherein the dielectric material comprises at least one of silicon dioxide, silicon nitride, an oxide of silicon, and a nitride of silicon.

79. The method of claim 44, wherein thinning comprises causing the release layer to release.

80. The method of claim 79, wherein the release layer comprises implanted hydrogen species.

87. The method of claim 44, further comprising at least two of:

performing bonding of the first surface of the first unitary substrate of the first type to the first surface of a second unitary substrate of the first type;

performing bonding of the first surface of the first unitary substrate of the first type to the second surface of a second unitary substrate of the first type;

performing bonding of the second surface of the first unitary substrate of the first type to the second surface of a second unitary substrate of the first type;

thinning the second surface of the second unitary substrate of the first type before bonding;

forming a dielectric layer over a surface of at least one of the first and second surfaces of the first unitary substrate of one of the first and second type, the dielectric layer having a stress of 5×

10⁸ dynes/cm² or less;

forming at least one of the unitary substrates of the first and second type from a semiconductor wafer or portion thereof;

wherein thinning comprises parting the first unitary substrate of one of the first type and the second type at a parting layer;

wherein thinning comprises parting said first unitary substrate at a parting layer comprising implanted hydrogen species;

performing at least one of polishing and Chemical Mechanical Polishing to make the first unitary substrate of one of the first type and the second type substantially flexible.

94. The method of claim 44, comprising performing at least one of polishing and Chemical Mechanical Polishing of the second surface of the second unitary substrate of at least one of the first and second type to make the unitary substrate substantially flexible.