Power MOS device fabrication
First Claim
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1. A method of fabricating a semiconductor device, comprising:
- forming a hard mask on a substrate having a top substrate surface;
forming a gate trench in the substrate, through the hard mask;
depositing gate material in the gate trench;
removing the hard mask to leave a gate structure;
implanting a body region;
implanting a source region;
forming a source body contact trench having a trench wall and a trench bottom;
anddisposing an anti-punch through implant along at least a section of the trench wall but not along the trench bottom.
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Abstract
Fabricating a semiconductor device includes forming a hard mask on the substrate having a top substrate surface; forming a gate trench in the substrate, through the hard mask; depositing gate material in the gate trench; removing the hard mask to leave a gate structure; implanting a body region; implanting a source region; forming a source body contact trench having a trench wall and a trench bottom; and disposing an anti-punch through implant along at least a section of the trench wall but not along the trench bottom.
12 Citations
20 Claims
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1. A method of fabricating a semiconductor device, comprising:
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forming a hard mask on a substrate having a top substrate surface; forming a gate trench in the substrate, through the hard mask; depositing gate material in the gate trench; removing the hard mask to leave a gate structure; implanting a body region; implanting a source region; forming a source body contact trench having a trench wall and a trench bottom; and disposing an anti-punch through implant along at least a section of the trench wall but not along the trench bottom. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20)
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Specification