Dry-etching method
First Claim
1. A plasma processing method for use in a plasma processing apparatus, which includes a vacuum chamber for accommodating a substrate to be processed therein to perform a plasma processing thereon;
- an electrode provided in the vacuum chamber;
a first high frequency power supply for supplying a first high frequency power to the electrode;
a DC power supply for supplying a DC voltage to the electrode, the method comprising;
starting supplying the DC voltage from the DC power supply to the electrode; and
then, starting supplying the first high frequency power from the first high frequency power supply to the electrode.
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Accused Products
Abstract
A main etching step is effected in a state shown in FIG. 1A under a first pressure using a gas containing at least HBr, e.g., a mixture gas of HBr and Cl2 as an etching gas. The main etching is ended before a silicon oxide film 102, as shown in FIG. 1B, is exposed. An over-etching process is effected under a second pressure higher than the first pressure using a gas containing at least HBr, e.g., an HBr single gas so as to completely expose the silicon oxide film 102 as shown in FIG. 1C. In such a way, the selectivity of a silicon-containing conductive layer with respect to the silicon oxide film is improved compared to conventional methods. Without etching the silicon oxide film layer, which is an underlying layer, and without marring the shape of the silicon-containing conductive film layer formed by etching, only the desired silicon-containing conductive film layer is removed by etching reliably.
17 Citations
15 Claims
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1. A plasma processing method for use in a plasma processing apparatus, which includes a vacuum chamber for accommodating a substrate to be processed therein to perform a plasma processing thereon;
- an electrode provided in the vacuum chamber;
a first high frequency power supply for supplying a first high frequency power to the electrode;
a DC power supply for supplying a DC voltage to the electrode, the method comprising;starting supplying the DC voltage from the DC power supply to the electrode; and then, starting supplying the first high frequency power from the first high frequency power supply to the electrode. - View Dependent Claims (2, 3, 4, 5, 6)
- an electrode provided in the vacuum chamber;
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7. A plasma processing method for use in a plasma processing apparatus, which includes a vacuum chamber for accommodating a substrate to be processed therein to perform a plasma processing thereon;
- a lower electrode, provided in the vacuum chamber, on which the substrate is mounted;
an upper electrode provided in the vacuum chamber to face the lower electrode;
a first high frequency power supply for supplying a first high frequency power to the upper electrode;
a second high frequency power supply for supplying a second high frequency power to the lower electrode; and
a DC power supply supplying a DC voltage to the upper electrode, the method comprising;starting supplying the DC voltage from the DC power supply to the upper electrode; and
then,starting supplying the first high frequency power from the first high frequency power supply to the upper electrode and supplying the second high frequency power from the second high frequency power supply to the lower electrode. - View Dependent Claims (8, 9, 10)
- a lower electrode, provided in the vacuum chamber, on which the substrate is mounted;
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11. A plasma processing method for use in a plasma processing apparatus, which includes a vacuum chamber for accommodating a substrate to be processed therein to perform a plasma processing thereon;
- a lower electrode, provided in the vacuum chamber, on which the substrate is mounted;
an upper electrode provided in the vacuum chamber to face the lower electrode;
a first high frequency power supply for supplying a first high frequency power to the upper electrode;
a second high frequency power supply for supplying a second high frequency power to the lower electrode; and
a DC power supply supplying a DC voltage to the upper electrode, the method comprising;starting supplying the DC voltage from the DC power supply to the upper electrode; and subsequently starting supplying the first high frequency power from the first high frequency power supply to the upper electrode and supplying the second high frequency power from the second high frequency power supply to the lower electrode, thereby reliably igniting a plasma in the vacuum chamber. - View Dependent Claims (12, 13, 14, 15)
- a lower electrode, provided in the vacuum chamber, on which the substrate is mounted;
Specification