Schottky diode switch and memory units containing the same
First Claim
1. A bidirectional switch comprising:
- a first semiconductor layer;
a second semiconductor layer;
a first insulating layer disposed between the first semiconductor layer and the second semiconductor layer;
a first metal contact in physical contact with the first semiconductor layer, the second semiconductor layer and the first insulating layer; and
a second metal contact in physical contact with the first semiconductor layer, the second semiconductor layer and the first insulating layer,wherein the physical contacts between the first metal contact and the first semiconductor layer, the first metal contact and the second semiconductor layer, the second metal contact and the first semiconductor layer, and the second metal contact and the second semiconductor layer are independently either Schottky contacts or ohmic contacts with the proviso that the orientation of the Schottky contacts and the ohmic contacts in the first semiconductor layer are opposite to the orientation of the Schottky contacts and the ohmic contacts in the second semiconductor layer.
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Accused Products
Abstract
A switching element that includes a first semiconductor layer, the first semiconductor layer having a first portion and a second portion; a second semiconductor layer, the second semiconductor layer having a first portion and a second portion; an insulating layer disposed between the first semiconductor layer and the second semiconductor layer; a first metal contact in contact with the first portion of the first semiconductor layer forming a first junction and in contact with the first portion of the second semiconductor layer forming a second junction; a second metal contact in contact with the second portion of the first semiconductor layer forming a third junction and in contact with the second portion of the second semiconductor layer forming a fourth junction, wherein the first junction and the fourth junction are Schottky contacts, and the second junction and the third junction are ohmic contacts.
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Citations
19 Claims
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1. A bidirectional switch comprising:
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a first semiconductor layer; a second semiconductor layer; a first insulating layer disposed between the first semiconductor layer and the second semiconductor layer; a first metal contact in physical contact with the first semiconductor layer, the second semiconductor layer and the first insulating layer; and a second metal contact in physical contact with the first semiconductor layer, the second semiconductor layer and the first insulating layer, wherein the physical contacts between the first metal contact and the first semiconductor layer, the first metal contact and the second semiconductor layer, the second metal contact and the first semiconductor layer, and the second metal contact and the second semiconductor layer are independently either Schottky contacts or ohmic contacts with the proviso that the orientation of the Schottky contacts and the ohmic contacts in the first semiconductor layer are opposite to the orientation of the Schottky contacts and the ohmic contacts in the second semiconductor layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A bidirectional switch comprising:
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a first semiconductor layer; a second semiconductor layer; a first insulating layer disposed between the first semiconductor layer and the second semiconductor layer; a first metal contact in physical contact with the first semiconductor layer, the second semiconductor layer and the first insulating layer; and a second metal contact in physical contact with the first semiconductor layer, the second semiconductor layer and the first insulating layer, wherein the physical contacts between the first metal contact and the first semiconductor layer, the first metal contact and the second semiconductor layer, the second metal contact and the first semiconductor layer, and the second metal contact and the second semiconductor layer are independently either Schottky contacts or ohmic contacts, and wherein the physical contact between the first metal contact and the first semiconductor layer and the physical contact between the first metal contact and the second semiconductor layer are not the same and the physical contact between the second metal contact and the first semiconductor layer and the physical contact between the second metal contact and the second semiconductor layer are not the same. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18)
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19. A bidirectional switch comprising:
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a first semiconductor layer; a second semiconductor layer; a first insulating layer disposed between the first semiconductor layer and the second semiconductor layer; a first metal contact in physical contact with the first semiconductor layer, the second semiconductor layer and the first insulating layer; and a second metal contact in physical contact with the first semiconductor layer, the second semiconductor layer and the first insulating layer, wherein the first semiconductor layer is crystalline silicon and a portion of the first semiconductor layer in contact with the second metal contact is doped with phosphorus (P), boron (B), or arsenic (As), the second semiconductor layer is crystalline silicon and a portion of the second semiconductor layer in contact with the second metal contact is doped with phosphorus (P), boron (B), or arsenic (As), and the portion of the first semiconductor layer in contact with the first metal contact and the portion of the second semiconductor layer in contact with the first metal contact are not heavily doped.
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Specification