Thin film light emitting diode
First Claim
Patent Images
1. A vertical topology light emitting device, comprising:
- a conductive support structure;
a semiconductor structure over the conductive support structure, wherein the semiconductor structure has a first surface, a second surface and a side surface;
a first electrode between the conductive support structure and the first surface of the semiconductor structure such that the first electrode is electrically connected to the conductive support structure;
a second electrode over the second surface of the semiconductor structure, wherein the second surface is opposite the first surface;
a passivation layer over the semiconductor structure;
a wavelength converting layer over the second surface of the semiconductor structure; and
an open space corresponding to the second electrode, wherein the open space prevents the wavelength converting layer from contacting a wire, and wherein the open space is a portion not covered by the passivation layer and the wavelength converting layer.
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Abstract
Light emitting LEDs devices comprised of LED chips that emit light at a first wavelength, and a thin film layer over the LED chip that changes the color of the emitted light. For example, a blue LED chip can be used to produce white light. The thin film layer beneficially consists of a florescent material, such as a phosphor, and/or includes tin. The thin film layer is beneficially deposited using chemical vapor deposition.
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Citations
76 Claims
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1. A vertical topology light emitting device, comprising:
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a conductive support structure; a semiconductor structure over the conductive support structure, wherein the semiconductor structure has a first surface, a second surface and a side surface; a first electrode between the conductive support structure and the first surface of the semiconductor structure such that the first electrode is electrically connected to the conductive support structure; a second electrode over the second surface of the semiconductor structure, wherein the second surface is opposite the first surface; a passivation layer over the semiconductor structure; a wavelength converting layer over the second surface of the semiconductor structure; and an open space corresponding to the second electrode, wherein the open space prevents the wavelength converting layer from contacting a wire, and wherein the open space is a portion not covered by the passivation layer and the wavelength converting layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45, 46, 47, 48, 49, 50, 51, 52, 53, 54, 55, 56, 57, 58, 59, 60, 61, 62, 63, 64, 65, 66, 67, 68, 69, 70, 71, 72, 73, 74, 75, 76)
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Specification