Semiconductor device and method for forming the same
First Claim
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1. A method of manufacturing a semiconductor device, the method comprising:
- forming a junction region in an upper portion of a semiconductor substrate through an implantation process, wherein the junction region is configured to have a first polarity;
forming a trench defining a buried gate by etching the junction region and the substrate under the junction region;
forming a gate electrode within a lower portion of the trench; and
implanting ions at a sidewall of the trench to form an implantation region between the junction region and the gate electrode, wherein the implantation region is configured to have the first polarity.
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Abstract
The present invention relates to a semiconductor device, which includes a junction region formed in an active area of a semiconductor substrate; a trench defining a buried gate predetermined area within the semiconductor substrate; a gate electrode buried in an lower portion of the trench; an ion implantation region formed in a sidewall of the trench; and a capping insulation layer formed in an upper portion of the gate electrode.
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7 Claims
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1. A method of manufacturing a semiconductor device, the method comprising:
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forming a junction region in an upper portion of a semiconductor substrate through an implantation process, wherein the junction region is configured to have a first polarity; forming a trench defining a buried gate by etching the junction region and the substrate under the junction region; forming a gate electrode within a lower portion of the trench; and implanting ions at a sidewall of the trench to form an implantation region between the junction region and the gate electrode, wherein the implantation region is configured to have the first polarity. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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