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Semiconductor device and method for forming the same

  • US 8,288,801 B2
  • Filed: 07/09/2010
  • Issued: 10/16/2012
  • Est. Priority Date: 11/27/2009
  • Status: Active Grant
First Claim
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1. A method of manufacturing a semiconductor device, the method comprising:

  • forming a junction region in an upper portion of a semiconductor substrate through an implantation process, wherein the junction region is configured to have a first polarity;

    forming a trench defining a buried gate by etching the junction region and the substrate under the junction region;

    forming a gate electrode within a lower portion of the trench; and

    implanting ions at a sidewall of the trench to form an implantation region between the junction region and the gate electrode, wherein the implantation region is configured to have the first polarity.

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