Semiconductor light-emitting device and method for manufacturing same

• US 8,288,843 B2
• Filed: 03/22/2010
• Issued: 10/16/2012
• Est. Priority Date: 11/19/2009
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Kojima, Akihiro, Sugizaki, Yoshiaki
• Primary Examiner(s): YEUNG LOPEZ, FEIFEI
• Application Number:
  US12/728,846
• Publication Number:
  US 20110114978A1
• Time in Patent Office: 939 Days
• Field of Search: None
• US Class Current: 257/620
• CPC Class Codes: H01L 2224/16 of an individual bump connector
• CPC Class Codes: H01L 24/10 Bump connectors bumps on insulating substrates, e.g. chip carriers, H01L23/49816; Manufacturing methods related thereto
• CPC Class Codes: H01L 24/94 at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
• CPC Class Codes: H01L 24/95 at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
• CPC Class Codes: H01L 24/96 the devices being encapsulated in a common layer, e.g. neo-wafer or pseudo-wafer, said common layer being separable into individual assemblies after connecting
• CPC Class Codes: H01L 24/97 the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/12041 LED
• CPC Class Codes: H01L 2924/12042 LASER
• CPC Class Codes: H01L 2933/0041 relating to wavelength conversion elements
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/0095 Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/36 characterised by the electrodes
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/382 the electrode extending partially in or entirely through the semiconductor body
• CPC Class Codes: H01L 33/385 the electrode extending at least partially onto a side surface of the semiconductor body
• CPC Class Codes: H01L 33/387 with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01L 33/486 adapted for surface mounting
• CPC Class Codes: H01L 33/50 : Wavelength conversion elements
• CPC Class Codes: H01L 33/507 : the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
• CPC Class Codes: H01L 33/62 : Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

A semiconductor light-emitting device includes: a first semiconductor layer having a first major surface, a second major surface which is an opposite side from the first major surface, and a side surface; a second semiconductor layer provided on the second major surface of the first semiconductor layer and including a light-emitting layer; electrodes provided on the second major surface of the first semiconductor layer and on a surface of the second semiconductor layer on an opposite side from the first semiconductor layer; an insulating layer having a first surface formed on the second major surface side of the first semiconductor layer and a second surface which is an opposite side from the first surface; an external terminal which is a conductor provided on the second surface side of the insulating layer; and a phosphor layer provided on the first major surface of the first semiconductor layer and on a portion of the first surface of the insulating layer, the portion being adjacent to the side surface of the first semiconductor layer.

Claims

1. A semiconductor light-emitting device comprising:

a first semiconductor layer having a first major surface, a second major surface which is an opposite side from the first major surface, and a side surface;

a second semiconductor layer provided on a top of the second major surface of the first semiconductor layer and including a light-emitting layer;

electrodes provided on the second major surface of the first semiconductor layer and on a lower surface of the second semiconductor layer on an opposite side from the first semiconductor layer;

an insulating layer having a first surface above the lower surface of the second semiconductor layer and a second surface which is an opposite side from the first surface;

an external terminal which is a conductor provided on the second surface side of the insulating layer; and

a phosphor layer provided on the first major surface of the first semiconductor layer and on the side surface of the first semiconductor layer on the first surface of the insulating layer;

wherein a portion of the first semiconductor layer is formed above the first surface of the insulating layer and another portion of the first semiconductor layer is formed below the first surface of the insulating layer.

2. The device of claim 1, wherein the phosphor layer covers a step portion between the first surface of the insulating layer and the first major surface of the first semiconductor layer.

3. The device of claim 2, wherein the first semiconductor layer is larger in planar size than the second semiconductor layer, and the step portion is formed at a portion of the first semiconductor layer outside an outer edge of the second semiconductor layer.

4. The device of claim 1, wherein the phosphor layer is provided in a groove reaching the first surface of the insulating layer through the first semiconductor layer.

5. The device of claim 4, wherein the first semiconductor layer is larger in planar size than the second semiconductor layer, and the groove is formed at a portion of the first semiconductor layer outside an outer edge of the second semiconductor layer.

6. The device of claim 1, wherein the phosphor layer continuously surrounds a periphery of the side surface of the first semiconductor layer.

7. The device of claim 1, wherein a distance between the side surface and an edge of an interface between the first semiconductor layer and the second semiconductor layer is generally uniform throughout the periphery of the first semiconductor layer.

8. The device of claim 1, wherein the phosphor layer is provided in contact with the first major surface of the first semiconductor layer.

9. The device of claim 1, further comprising:

a metal pillar connected to each of the electrodes and provided on the second major surface side, wherein the external terminal is provided on an end surface of the metal pillar on an opposite side from each of the electrodes.

10. The device of claim 9, further comprising:

a resin covering a periphery of the metal pillar.

17. The device of claim 1, wherein the phosphor layer is also provided on the side surface of the first semiconductor layer and on the portion of the first surface of the insulating layer.

19. The device of claim 1, wherein the first semiconductor layer is provided in a mesa or trapezoidal shape on the first surface of the insulating layer.

11. A semiconductor light-emitting device comprising:

a first semiconductor layer having a first major surface, a second major surface which is an opposite side from the first major surface, and a side surface;

a second semiconductor layer provided on a top of the second major surface of the first semiconductor layer and including a light-emitting layer;

electrodes provided on the second major surface of the first semiconductor layer and on a lower surface of the second semiconductor layer on an opposite side from the first semiconductor layer;

an insulating layer having a first surface above the lower surface of the second semiconductor layer and a second surface which is an opposite side from the first surface; and

a phosphor layer provided on the first major surface of the first semiconductor layer and on the side surface of the first semiconductor layer in a groove on the first surface of the insulating layer;

wherein a portion of the first semiconductor layer is formed above the first surface of the insulating layer and another portion of the first semiconductor layer is formed below the first surface of the insulating layer.

12. The device of claim 11, wherein the groove continuously surrounds a periphery of the side surface of the first semiconductor layer.

13. The device of claim 11, wherein a distance between the side surface and an edge of an interface between the first semiconductor layer and the second semiconductor layer is generally uniform throughout the periphery of the first semiconductor layer.

14. The device of claim 12, wherein the groove divides the first semiconductor layer into a light-emitting section including a multilayer structure with the second semiconductor layer and a non-light-emitting section outside the side surface.

15. The device of claim 11, wherein the phosphor layer is provided in contact with the first major surface of the first semiconductor layer.

16. The device of claim 11, further comprising:

a metal pillar connected to each of the electrodes and provided on the second major surface side.

18. The device of claim 11, wherein the phosphor layer is also provided on the side surface of the first semiconductor layer and on the portion of the first surface of the insulating layer.

20. The device of claim 11, wherein the first semiconductor layer is provided in a mesa or trapezoidal shape on the first surface of the insulating layer.