Light emitting diode apparatus and manufacturing method thereof
First Claim
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1. An LED apparatus, comprising a lead frame;
- at least one group of AC-driven micro-LED chips;
at least one group of DC-driven LED chips; and
at least one wavelength conversion phosphor material for absorbing radiation emission of the chips;
wherein the group of the AC-driven micro-LED chips and the group of DC-driven LED chips are individually mounted onto the lead frame and connected by a conductive wire to form the LED apparatus capable of being driven by an AC power source, the wavelength conversion phosphor material absorbs a part of the radiation emission of the chips thereby converting a spectral region thereof to have a different peak wavelengthwherein the group of DC-driven LED chips is composed of AlInGaN-based and InGaPN-based compound semiconductors.
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Abstract
The present invention discloses a light emitting diode apparatus and a manufacturing method thereof, and more particularly to provide an AC-driven white light emitting diode apparatus comprising a plurality of groups of the AC-driven light emitting diode chips with different emission wavelengths and a plurality of groups of the DC-driven light emitting diode chips with different emission wavelengths. The AC-driven white light emitting diode apparatus manufactured by the disclosed method has the properties of high color rendering, high light emitting efficiency, and stable chromaticity coordinate.
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Citations
17 Claims
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1. An LED apparatus, comprising a lead frame;
- at least one group of AC-driven micro-LED chips;
at least one group of DC-driven LED chips; and
at least one wavelength conversion phosphor material for absorbing radiation emission of the chips;
wherein the group of the AC-driven micro-LED chips and the group of DC-driven LED chips are individually mounted onto the lead frame and connected by a conductive wire to form the LED apparatus capable of being driven by an AC power source, the wavelength conversion phosphor material absorbs a part of the radiation emission of the chips thereby converting a spectral region thereof to have a different peak wavelengthwherein the group of DC-driven LED chips is composed of AlInGaN-based and InGaPN-based compound semiconductors. - View Dependent Claims (2, 3, 4, 5, 6)
- at least one group of AC-driven micro-LED chips;
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7. An LED apparatus, comprising a lead frame;
- at least one group of AlInGaN-based LED chips;
at least one group of InGaPN-based LED chips; and
at least one wavelength conversion phosphor material disposing on the at least one group of AlInGaN-based LED chips for absorbing radiation emission therefrom;
wherein the group of the AlInGaN-based LED chips and the group of the InGaPN-based LED chips are individually mounted onto the lead frame and connected by a conductive wire to form the LED apparatus capable of being driven by an AC power source, the wavelength conversion phosphor material absorbs a part of the radiation emission from the groups of the AlInGaN-based LED chips thereby converting a spectral region thereof to have a different peak wavelength,wherein the group of InGaPN-based LED chips is an AC-driven LED chips formed by connecting a plurality of InGaPN-based LED chips by a bridge connection. - View Dependent Claims (8, 9, 10)
- at least one group of AlInGaN-based LED chips;
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11. An LED apparatus manufacturing method, comprising the steps of:
- providing a lead frame;
mounting at least one group of AC-driven micro-LED chips and at least one group of DC-driven LED chips on the lead frame;
electrically connecting the groups of the AC-driven micro-LED chips and the DC-driven LED chips; and
providing a mixed resin comprising at least one wavelength conversion phosphor material formed over the groups of LED chips,wherein the group of DC-driven LED chips is composed of InGaPN-based compound semiconductors. - View Dependent Claims (12, 13, 14, 15, 16, 17)
- providing a lead frame;
Specification