RF power amplifier device and operating method thereof

• US 8,289,084 B2
• Filed: 05/26/2011
• Issued: 10/16/2012
• Est. Priority Date: 06/07/2010
• Status: Expired due to Fees

• Current Assignee: Renesas Electronics Corporation
• Original Assignee: Renesas Electronics Corporation
• Inventors: Kuriyama, Akira, Tanaka, Satoshi, Morimoto, Takaaki, Nakamura, Hayato
• Primary Examiner(s): Choe, Henry
• Application Number:
  US13/116,327
• Publication Number:
  US 20110298545A1
• Time in Patent Office: 509 Days
• Field of Search: 330/51, 330/285, 330/296, 330/297, 330/302
• US Class Current: 330/297
• CPC Class Codes: H03F 1/0216 Continuous control
• CPC Class Codes: H03F 1/0277 Selecting one or more amplifiers from a plurality of amplifiers
• CPC Class Codes: H03F 2200/108 A coil being added in the drain circuit of a FET amplifier stage, e.g. for noise reducing purposes
• CPC Class Codes: H03F 2200/222 A circuit being added at the input of an amplifier to adapt the input impedance of the amplifier
• CPC Class Codes: H03F 2200/27 A biasing circuit node being switched in an amplifier circuit
• CPC Class Codes: H03F 2200/318 A matching circuit being used as coupling element between two amplifying stages
• CPC Class Codes: H03F 2200/387 A circuit being added at the output of an amplifier to adapt the output impedance of the amplifier
• CPC Class Codes: H03F 2200/411 the output amplifying stage of an amplifier comprising two power stages
• CPC Class Codes: H03F 2200/451 the amplifier being a radio frequency amplifier
• CPC Class Codes: H03F 2200/504 the supply voltage or current being continuously controlled by a controlling signal, e.g. the controlling signal of a transistor implemented as variable resistor in a supply path for, an IC-block showed amplifier
• CPC Class Codes: H03F 2200/555 A voltage generating circuit being realised for biasing different circuit elements
• CPC Class Codes: H03F 2203/7206 the gated amplifier being switched on or off by a switch in the bias circuit of the amplifier controlling a bias voltage in the amplifier
• CPC Class Codes: H03F 3/195 in integrated circuits
• CPC Class Codes: H03F 3/211 using a combination of several amplifiers H03F3/60 takes precedence
• CPC Class Codes: H03F 3/245 with semiconductor devices only
• CPC Class Codes: H03F 3/45475 using IC blocks as the active amplifying circuit
• CPC Class Codes: H03F 3/72 Gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal

Abstract

An RF power amplifier device includes a driver stage amplifier, a first RF amplifier, a second RF amplifier and a DC voltage converter operated by first, second and third external power supply voltages. The output of the driver stage amplifier is supplied to the inputs of the first and second RF amplifiers. An effective device size of the first RF amplifier is set to a device size larger than that of the second RF amplifier. The third external power supply voltage is supplied to the DC voltage converter, so that the DC voltage converter generates a fourth operating power supply voltage corresponding to a low voltage and supplies it to an output terminal of the second RF amplifier. An output terminal of the first RF amplifier can be supplied with the second external power supply voltage without via the DC voltage converter.

Claims

1. An RF power amplifier device comprising:

a driver stage amplifier;

a first RF amplifier;

a second RF amplifier; and

a DC voltage converter,

wherein the driver stage amplifier, the first RF amplifier, the second RF amplifier, and the DC voltage converter are operable by external power supply voltages supplied from the outside of the RF power amplifier device,

wherein an output signal generated from an output terminal of the driver stage amplifier is capable of being supplied to an input terminal of the first RF amplifier and an input terminal of the second RF amplifier,

wherein an effective device size of the first RF amplifier is set to a device size larger than an effective device size of the second RF amplifier,

wherein the DC voltage converter is capable of generating an operating power supply voltage being a voltage lower than the external power supply voltage by being supplied with the external power supply voltage and supplying the operating power supply voltage to an output terminal of the second RF amplifier, and

wherein the external power supply voltage supplied from the outside of the RF power amplifier device is capable of being supplied to an output terminal of the first RF amplifier without via the DC voltage converter.

2. The RF power amplifier device according to claim 1, further comprising:

a bias circuit capable of supplying a first bias voltage, a second bias voltage, and a third bias voltage to an input terminal of the driver stage amplifier, the input terminal of the first RF amplifier, and the input terminal of the second RF amplifier respectively,

wherein the bias circuit sets the second bias voltage and the third bias voltage to a low level and a high level respectively in response to a first state of each of external control signals supplied to external control terminals of the RF power amplifier device to thereby control the first RF amplifier to an inactive state and control the second RF amplifier to an active state, and

wherein the bias circuit sets the second bias voltage and the third bias voltage to a high level and a low level respectively in response to a second state of each of the external control signals supplied to the external control terminals of the RF power amplifier device to thereby control the first RF amplifier to an active state and control the second RF amplifier to an inactive state.

3. The RF power amplifier device according to claim 2,

wherein the DC voltage converter is controlled to an inactive state in response to the second state of the external control signal to stop the generation of the operating power supply voltage from the external power supply voltage by the DC voltage converter.

4. The RF power amplifier device according to claim 3,

wherein, even when the external control signal is either the first state or the second state, the bias circuit sets the first bias voltage to a high level to thereby control the driver stage amplifier to an active state.

5. The RF power amplifier device according to claim 4,

wherein the first bias voltage, the second bias voltage of high level, and the third bias voltage of high level generated from the bias circuit are respectively set to values at which the driver stage amplifier, the first RF amplifier, and the second RF amplifier are linearly operable respectively.

6. The RF power amplifier device according to claim 5,

wherein the DC voltage converter is a DC-DC converter comprising a charge pump circuit.

7. The RF power amplifier device according to claim 5,

wherein the DC voltage converter is a DC-DC converter comprising a switching regulator using an inductor.

8. The RF power amplifier device according to claim 5, further comprising:

a switch coupled between an input terminal of the DC voltage converter supplied with the external power supply voltage and an output terminal of the DC voltage converter supplied with the operating power supply voltage,

wherein the DC voltage converter is controlled to the inactive state in response to the second state of the external control signal to control the switch to an on state, and the switch held in the on state bypasses between the input terminal of the DC voltage converter and the output terminal thereof to thereby enable the external power supply voltage supplied from the outside to be supplied to the output terminal of the first RF amplifier.

9. The RF power amplifier device according to claim 5, further comprising:

a series regulator coupled between the output terminal of the DC voltage converter from which the operating power supply voltage is generated, and the output terminal of the second RF amplifier,

wherein, when the DC voltage converter is controlled to an active state in response to the first state of the external control signal, the series regulator supplied with the operating power supply voltage generated from the output terminal of the DC voltage converter is capable of generating a conversion operation power supply voltage adjusted by an output voltage set signal supplied from the outside of the RF power amplifier device and supplying the same to the output terminal of the second RF amplifier.

10. The RF power amplifier device according to claim 5, further comprising:

a detector capable of detecting an amplitude level of an RF input signal at the input terminal of the driver stage amplifier,

wherein the operating power supply voltage corresponding to the low voltage generated from the DC voltage converter is varied in response to the output signal detected by the detector, and the varied operating power supply voltage is capable of being supplied to the output terminal of the second RF amplifier.

11. The RF power amplifier device according to claim 5, further comprising:

a change-over switch having a first input terminal, a second input terminal, a control input terminal, and an output terminal,

wherein the external power supply voltage is capable of being supplied to the first input terminal of the change-over switch, the operating power supply voltage generated from the output terminal of the DC voltage converter is capable of being supplied to the second input terminal of the change-over switch, the control input terminal of the change-over switch is capable of responding to the first state and the second state of the external control signal, and the output terminal of the change-over switch is coupled to the output terminal of the driver stage amplifier,

wherein, in response to the second state of the external control signal supplied to the control input terminal of the change-over switch, the change-over switch supplies the external power supply voltage supplied to the first input terminal to the output terminal of the driver stage amplifier via the output terminal of the change-over switch, and

wherein, in response to the first state of the external control signal supplied to the control input terminal of the change-over switch, the change-over switch supplies the operating power supply voltage of the DC voltage converter supplied to the second input terminal to the output terminal of the driver stage amplifier via the output terminal of the change-over switch.

12. The RF power amplifier device according to claim 11,

wherein the output terminal of the first RF amplifier and the output terminal of the second RF amplifier are coupled to an RF signal output terminal,

wherein the output terminal of the driver stage amplifier is further coupled to the RF signal output terminal via a signal switch,

wherein, in response to a third state in which the external control signals supplied to the external control terminals of the RF power amplifier device are respectively indicative of a lowest transmission output power state of the RF power amplifier device, the bias circuit sets the first bias voltage, the second bias voltage and the third bias voltage to a high level, a low level and a low level respectively to thereby control the driver stage amplifier to the active state, control the first RF amplifier to the inactive state and control the second RF amplifier to the inactive state, and

wherein the signal switch is controlled to an on state in response to the third state of the external control signal to transmit an amplified signal of the output terminal of the driver stage amplifier to the RF signal output terminal via the signal switch controlled to the on state.

13. The RF power amplifier device according to claim 5,

wherein the bias circuit comprises a first buffer amplifier and a second buffer amplifier which respectively supply the second bias voltage and the third bias voltage to the input terminal of the first RF amplifier and the input terminal of the second RF amplifier,

wherein, in response to the second states of the external control signals supplied to the external control terminals of the RF power amplifier device, the bias circuit supplies the external power supply voltages supplied from the outside of the RF power amplifier device to the first buffer amplifier and the second buffer amplifier respectively, and

wherein, in response to the first state of each of the external control signals supplied to the external control terminals of the RF power amplifier device, the bias circuit supplies the operating power supply voltage corresponding to the low voltage generated from the DC voltage converter to the first buffer amplifier and the second buffer amplifier.

14. The RF power amplifier device according to claim 5,

wherein the output terminal of the first RF amplifier and the output terminal of the second RF amplifier are coupled to an RF signal output terminal, and

wherein one end of an output matching circuit is coupled to the RF signal output terminal, a first interstage matching circuit is coupled between the other end of the output matching circuit and the output terminal of the first RF amplifier, and a second interstage matching circuit is coupled between the other end of the output matching circuit and the output terminal of the second RF amplifier.

15. The RF power amplifier device according to claim 5,

wherein the external power supply voltage generated from a DC-DC converter located outside the RF power amplifier device is capable of being supplied to the RF power amplifier device, and the driver stage amplifier, the first RF amplifier, the second RF amplifier and the DC voltage converter are operable by the external power supply voltage.

16. The RF power amplifier device according to claim 5, further comprising:

a third RF amplifier set to a device size smaller than the effective device size of the second RF amplifier,

wherein the bias circuit generates a fourth bias voltage and supplies the same to an input terminal of the third RF amplifier, and

wherein the output signal generated from the output terminal of the driver stage amplifier is capable of being supplied to the input terminal of the third RF amplifier, and an output terminal of the third RF amplifier is coupled to an RF signal output terminal to which the output terminal of the first RF amplifier and the output terminal of the second RF amplifier are coupled.

17. The RF power amplifier device according to claim 5,

wherein the driver stage amplifier, the first RF amplifier, and the second RF amplifier respectively comprise either a field effect transistor or a bipolar transistor.

18. An RF module comprising a balanced power amplifier provided inside one package, comprising:

a first RF power amplifier; and

a second RF power amplifier that is operable in parallel with the first RF power amplifier,

wherein the first and second RF power amplifiers respectively comprise an RF power amplifier device comprising;

a driver stage amplifier;

a first RF amplifier;

a second RF amplifier; and

a DC voltage converter,

wherein the driver stage amplifier, the first RF amplifier, the second RF amplifier, and the DC voltage converter are operable by external power supply voltages supplied from the outside of the RF power amplifier device,

wherein an output signal generated from an output terminal of the driver stage amplifier is capable of being supplied to an input terminal of the first RF amplifier and an input terminal of the second RF amplifier,

wherein an effective device size of the first RF amplifier is set to a device size larger than an effective device size of the second RF amplifier,

wherein the DC voltage converter is capable of generating an operating power supply voltage being a voltage lower than the external power supply voltage by being supplied with the external power supply voltage and supplying the operating power supply voltage to an output terminal of the second RF amplifier, and

wherein the external power supply voltage supplied from the outside of the RF power amplifier device is capable of being supplied to an output terminal of the first RF amplifier without via the DC voltage converter.

19. A method for operating an RF power amplifier device comprising a driver stage amplifier, a first RF amplifier, a second RF amplifier, a DC voltage converter, and a bias circuit, comprising the steps of:

enabling the driver stage amplifier, the first RF amplifier, the second RF amplifier and the DC voltage converter to be operated by external power supply voltages supplied from the outside of the RF power amplifier device;

enabling an output signal generated from an output terminal of the driver stage amplifier to be supplied to an input terminal of the first RF amplifier and an input terminal of the second RF amplifier, and setting an effective device size of the first RF amplifier to a device size larger than an effective device size of the second RF amplifier;

enabling the DC voltage converter to generate an operating power supply voltage corresponding to a voltage lower than the external power supply voltage by being supplied with the external power supply voltage, and enabling the DC voltage converter to supply the operating power supply voltage to an output terminal of the second RF power amplifier;

enabling the external power supply voltage supplied from the outside of the RF power amplifier device to be supplied to an output terminal of the first RF amplifier without via the DC voltage converter;

enabling the bias circuit to generate a first bias voltage, a second bias voltage and a third bias voltage respectively and enabling the same to be supplied to an input terminal of the driver stage amplifier, the input terminal of the first RF amplifier and the input terminal of the second RF amplifier respectively;

causing the bias circuit to set the second bias voltage and the third bias voltage to a low level and a high level respectively in response to first states of external control signals supplied to external control terminals of the RF power amplifier device to thereby control the first RF amplifier to an inactive state and control the second RF amplifier to an active state; and

causing the bias circuit to set the second bias voltage and the third bias voltage to a high level and a low level respectively in response to second states of the external control signals supplied to the external control terminals of the RF power amplifier device to thereby control the first RF amplifier to an active state and control the second RF amplifier to an inactive state.

20. The method according to claim 19,

wherein the DC voltage converter is controlled to an inactive state in response to the second state of the external control signal thereby to stop the generation of the operating power supply voltage from the external power supply voltage by the DC voltage converter.