Semiconductor memory device and method for operating the same

• US 8,289,787 B2
• Filed: 12/21/2010
• Issued: 10/16/2012
• Est. Priority Date: 04/30/2010
• Status: Expired due to Fees

• Current Assignee: Hynix Semiconductor Incorporated (SK Hynix Inc.)
• Original Assignee: Hynix Semiconductor Incorporated (SK Hynix Inc.)
• Inventors: Kim, Ji-Hwan, Park, Seong-Je
• Primary Examiner(s): Nguyen, Tuan T.
• Application Number:
  US12/974,419
• Publication Number:
  US 20110267905A1
• Time in Patent Office: 665 Days
• Field of Search: 365/189.16, 365/189.09, 365/211
• US Class Current: 365/189.16
• CPC Class Codes: G11C 16/10 Programming or data input circuits
• CPC Class Codes: G11C 16/30 Power supply circuits
• CPC Class Codes: G11C 7/04 with means for avoiding disturbances due to temperature effects

Abstract

A semiconductor memory device, including a temperature detector configured to output a temperature detection signal in response to a temperature detected in a core region which includes a plurality of memory cells, and a programming voltage generator configured to generate a programming voltage in response to the temperature detection signal and output a generated programming voltage to the core region.

Claims

1. A semiconductor memory device, comprising:

a temperature detector configured to output a temperature detection signal in response to a temperature detected in a core region which includes a plurality of memory cells; and

a programming voltage generator configured to generate a programming voltage in response to the temperature detection signal and output the generated programming voltage to the core region.

2. The semiconductor memory device of claim 1, wherein the programming voltage comprises a starting voltage set in response to the temperature detection signal.

3. The semiconductor memory device of claim 2, wherein the programming voltage is increased step by step from the starting voltage by a predetermined voltage level.

4. A method for operating a semiconductor memory device, comprising:

determining a temperature in a core region which includes a plurality of memory cells;

controlling and maintaining a starting voltage of a programming voltage based on a determined temperature;

generating the programming voltage based on the starting voltage; and

applying a generated programming voltage to the core region.

5. The method of claim 4, further comprising:

setting a deciding voltage corresponding to a memory cell based on the determined temperature.

6. The method of claim 4, wherein in the controlling and maintaining of the starting voltage of the programming voltage, when the temperature is lower than a predetermined temperature, the starting voltage is adjusted upwardly.

7. The method of claim 6, wherein the programming voltage is increased step by step from the starting voltage by a predetermined voltage level.

8. The method of claim 4, wherein the starting voltage is higher than the predetermined starting voltage.

9. A method for operating a semiconductor memory device, comprising:

detecting a temperature of a core region;

controlling a starting voltage of a programming voltage based on the detected temperature;

generating the programming voltage based on the starting voltage; and

applying a generated programming voltage to the core region.

10. The method of claim 9, further comprising:

setting a deciding voltage corresponding to a memory cell based on the detected temperature.

11. The method of claim 9, wherein during the controlling of the starting voltage, when the detected temperature is lower than a predetermined temperature, the starting voltage is adjusted upwardly.

12. The method of claim 11, wherein if the starting voltage is adjusted upwardly, the programming voltage is increased step by step from the starting voltage by a predetermined voltage level.

13. The method of claim 12, wherein during the controlling of the starting voltage, when the detected temperature is higher than a predetermined temperature, the programming voltage is generated based on the starting voltage, which is lower than the starting voltage adjusted upwardly.