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Non-volatile memory bank and page buffer therefor

  • US 8,289,805 B2
  • Filed: 09/10/2010
  • Issued: 10/16/2012
  • Est. Priority Date: 11/27/2006
  • Status: Active Grant
First Claim
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1. A memory bank comprising:

  • a first memory sector having memory cells connected to first bitlines and first wordlines, the first bitlines being arranged as m segments where m is an integer value greater than 0;

    a second memory sector having memory cells connected to second bitlines and second wordlines, the second bitlines being arranged as m segments;

    a page buffer disposed between the first memory sector and the second memory sector for selectively coupling one of the first bitlines and the second bitlines of each of the m segments to a predetermined number of datelines.

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