Waveguide photodetector device and manufacturing method thereof
First Claim
1. A method of forming a semiconductor device comprising:
- providing a substrate;
forming a waveguide element on the substrate, wherein the waveguide element comprises a top surface and sidewalls, wherein the sidewalls extend from the top surface to the substrate;
forming a cladding layer onto the waveguide element and the substrate, wherein the cladding layer exposes the top surface of waveguide element and a portion of the sidewalls proximal to the top surface of waveguide element; and
forming a photodetector element on the waveguide element, wherein the photodetector element abuts and encapsulates the top surface of waveguide element and the portion of the sidewalls exposed by the cladding layer proximal to the top surface of waveguide element, such that the photodetector element contacts the cladding along the waveguide element sidewall.
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Abstract
Embodiments of the present invention describe a waveguide-based photodetector device and its methods of fabrication. The waveguide photodetector device comprises a substrate having a cladding structure formed thereon. A waveguide element for receiving optical signals is disposed within the cladding structure. A portion of the waveguide element is encapsulated by a photodetector element that detects the optical signal received by the waveguide element and generates an electrical signal based on the optical signal. Encapsulating the waveguide element in the photodetector element improves coupling efficiency and enables a waveguide photodetector device with higher speeds and higher responsivity.
62 Citations
26 Claims
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1. A method of forming a semiconductor device comprising:
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providing a substrate; forming a waveguide element on the substrate, wherein the waveguide element comprises a top surface and sidewalls, wherein the sidewalls extend from the top surface to the substrate; forming a cladding layer onto the waveguide element and the substrate, wherein the cladding layer exposes the top surface of waveguide element and a portion of the sidewalls proximal to the top surface of waveguide element; and forming a photodetector element on the waveguide element, wherein the photodetector element abuts and encapsulates the top surface of waveguide element and the portion of the sidewalls exposed by the cladding layer proximal to the top surface of waveguide element, such that the photodetector element contacts the cladding along the waveguide element sidewall. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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17. A method of forming a semiconductor device comprising:
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providing a substrate; forming a photodetector element on the substrate, the photodetector element having a trench formed thereon; and forming a waveguide element on the trench of photodetector element, wherein the waveguide element comprises a top surface, a bottom surface, and sidewalls extending from the top surface to the bottom surface, and wherein the trench of photodetector element encapsulates and abuts the bottom surface and a portion each sidewalls proximal to bottom surface of waveguide element; depositing a layer of cladding material onto the waveguide element and the photodetector element, such that the cladding material layer contacts the photodetector element along the waveguide element sidewall. - View Dependent Claims (18, 19, 20, 21, 22, 23, 24, 25, 26)
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Specification