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Waveguide photodetector device and manufacturing method thereof

  • US 8,290,325 B2
  • Filed: 06/30/2008
  • Issued: 10/16/2012
  • Est. Priority Date: 06/30/2008
  • Status: Active Grant
First Claim
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1. A method of forming a semiconductor device comprising:

  • providing a substrate;

    forming a waveguide element on the substrate, wherein the waveguide element comprises a top surface and sidewalls, wherein the sidewalls extend from the top surface to the substrate;

    forming a cladding layer onto the waveguide element and the substrate, wherein the cladding layer exposes the top surface of waveguide element and a portion of the sidewalls proximal to the top surface of waveguide element; and

    forming a photodetector element on the waveguide element, wherein the photodetector element abuts and encapsulates the top surface of waveguide element and the portion of the sidewalls exposed by the cladding layer proximal to the top surface of waveguide element, such that the photodetector element contacts the cladding along the waveguide element sidewall.

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