Apparatuses and methods for atomic layer deposition
First Claim
1. A chamber for plasma-enhanced atomic layer deposition processes, comprising:
- a substrate support containing a substrate receiving surface and disposed within a chamber body;
a chamber lid assembly coupled with the chamber body and comprising;
an inlet manifold assembly comprising an annular channel encompassing a centralized channel, wherein the centralized channel extends through the inlet manifold assembly, the inlet manifold assembly further comprises injection holes extending from the annular channel, through a sidewall of the centralized channel, and into the centralized channel;
a showerhead assembly comprising a showerhead plate disposed below the inlet manifold assembly;
a water box disposed between the inlet manifold assembly and the showerhead assembly; and
a remote plasma system disposed above and coupled with the inlet manifold assembly, and in fluid communication with the centralized channel; and
a processing region disposed between the substrate receiving surface and a lower surface of the showerhead plate.
1 Assignment
0 Petitions
Accused Products
Abstract
Embodiments of the invention provide apparatuses and methods for atomic layer deposition (ALD), such as plasma-enhanced ALD (PE-ALD). In some embodiments, a PE-ALD chamber is provided which includes a chamber lid assembly coupled with a chamber body having a substrate support therein. In one embodiment, the chamber lid assembly has an inlet manifold assembly containing an annular channel encompassing a centralized channel, wherein the centralized channel extends through the inlet manifold assembly, and the inlet manifold assembly further contains injection holes extending from the annular channel, through a sidewall of the centralized channel, and to the centralized channel. The chamber lid assembly further contains a showerhead assembly disposed below the inlet manifold assembly, a water box disposed between the inlet manifold assembly and the showerhead assembly, and a remote plasma system (RPS) disposed above and coupled with the inlet manifold assembly, and in fluid communication with the centralized channel.
378 Citations
16 Claims
-
1. A chamber for plasma-enhanced atomic layer deposition processes, comprising:
-
a substrate support containing a substrate receiving surface and disposed within a chamber body; a chamber lid assembly coupled with the chamber body and comprising; an inlet manifold assembly comprising an annular channel encompassing a centralized channel, wherein the centralized channel extends through the inlet manifold assembly, the inlet manifold assembly further comprises injection holes extending from the annular channel, through a sidewall of the centralized channel, and into the centralized channel; a showerhead assembly comprising a showerhead plate disposed below the inlet manifold assembly; a water box disposed between the inlet manifold assembly and the showerhead assembly; and a remote plasma system disposed above and coupled with the inlet manifold assembly, and in fluid communication with the centralized channel; and a processing region disposed between the substrate receiving surface and a lower surface of the showerhead plate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
-
Specification