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Method of manufacturing semiconductor device, and bonding apparatus

  • US 8,292,160 B2
  • Filed: 08/22/2011
  • Issued: 10/23/2012
  • Est. Priority Date: 02/23/2009
  • Status: Active Grant
First Claim
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1. A method of manufacturing a semiconductor device, the method comprising:

  • a pressure contact step of bringing an initial ball formed at a tip end of a bonding wire that is inserted through a capillary into pressure contact with a pad surface of a bonding target placed on a bonding stage; and

    a scrubbing step of spirally rotating the capillary in a direction perpendicular to a direction of pressure on the initial ball when the initial ball is in pressure contact with the pad surface;

    wherein the scrubbing step comprises specifying a position where the initial ball comes into contact with the pad surface as a reference position, spirally rotating the capillary from the reference position while increasing a diameter of a spiral, and thereafter spirally rotating the capillary while reducing the diameter of the spiral to recover the reference position.

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