Method for producing an area having reduced electrical conductivity within a semiconductor layer and optoelectronic semiconductor element
First Claim
1. A method for producing at least one area having reduced electrical conductivity within an electrically conductive III-V semiconductor layer, comprising:
- applying a ZnO layer on the area of the electrically conductive III-V semiconductor layer; and
subsequently annealing;
wherein a first ZnO layer is deposited on a first area of the electrically conductive III-V semiconductor layer, and a second ZnO layer is deposited on a second area of the electrically conductive III-V semiconductor layer, with a deposition temperature of the second ZnO layer increased relative to a deposition temperature of the first ZnO layer such that a conductivity of the second area of the electrically conductive III-V semiconductor layer is at least less reduced than a conductivity of the first area of the electrically conductive III-V semiconductor layer during annealing.
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Accused Products
Abstract
In a method for producing at least at least one area (8) with reduced electrical conductivity within an electrically conductive III-V semiconductor layer (3), a ZnO layer (1) is applied to the area (8) of the semiconductor layer (3) and subsequently annealed at a temperature preferably between 300° C. and 500° C. The ZnO layer (1) is preferably deposited on the III-V semiconductor layer (3) at a temperature of less than 150° C., preferably at a temperature greater than or equal to 25° C. and less than or equal to 120° C. The area (8) with reduced electrical conductivity is preferably located in a radiation emitting optoelectronic device between the active zone (4) and a connecting contact (7) in order to reduce current injection into the areas of the active zone (4) located opposite to the connecting contact (7).
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Citations
22 Claims
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1. A method for producing at least one area having reduced electrical conductivity within an electrically conductive III-V semiconductor layer, comprising:
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applying a ZnO layer on the area of the electrically conductive III-V semiconductor layer; and subsequently annealing; wherein a first ZnO layer is deposited on a first area of the electrically conductive III-V semiconductor layer, and a second ZnO layer is deposited on a second area of the electrically conductive III-V semiconductor layer, with a deposition temperature of the second ZnO layer increased relative to a deposition temperature of the first ZnO layer such that a conductivity of the second area of the electrically conductive III-V semiconductor layer is at least less reduced than a conductivity of the first area of the electrically conductive III-V semiconductor layer during annealing. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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- 17. An optoelectronic semiconductor device with a III-V semiconductor layer that is covered with a ZnO layer in at least a first area, wherein a conductivity of the III-V semiconductor layer in the first area covered by the ZnO layer is lower than in laterally adjacent areas of the III-V semiconductor layer, and wherein a second ZnO layer is deposited on a second area of the III-V semiconductor layer and a conductivity of the second area of the III-V semiconductor layer is greater than a conductivity of the first area.
Specification