Multilayer pillar for reduced stress interconnect and method of making same
First Claim
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1. A method of forming a copper interconnect pillar, the method comprising:
- forming a first copper layer;
forming a first nickel barrier protective layer in direct contact on the first copper layer;
forming a substantially planar first intermediate layer in direct contact with the first nickel barrier protective layer on the first copper layer, the first intermediate layer having a modulus of elasticity lower than the first copper layer, and the first intermediate layer being a single material comprising one of tin, bismuth and indium;
forming a second nickel barrier protective layer in direct contact with the first intermediate layer, on a surface opposing the first nickel barrier protective layer;
forming a second copper layer in direct contact with the second nickel barrier protective layer on an opposing side thereof to the first intermediate layer, the first intermediate layer having a modulus of elasticity lower than the second copper layer; and
bonding a chip to the first copper layer and a substrate to the second copper layer.
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Abstract
A multi-layer pillar and method of fabricating the same is provided. The multi-layer pillar is used as an interconnect between a chip and substrate. The pillar has at least one low strength, high ductility deformation region configured to absorb force imposed during chip assembly and thermal excursions.
21 Citations
19 Claims
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1. A method of forming a copper interconnect pillar, the method comprising:
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forming a first copper layer; forming a first nickel barrier protective layer in direct contact on the first copper layer; forming a substantially planar first intermediate layer in direct contact with the first nickel barrier protective layer on the first copper layer, the first intermediate layer having a modulus of elasticity lower than the first copper layer, and the first intermediate layer being a single material comprising one of tin, bismuth and indium; forming a second nickel barrier protective layer in direct contact with the first intermediate layer, on a surface opposing the first nickel barrier protective layer; forming a second copper layer in direct contact with the second nickel barrier protective layer on an opposing side thereof to the first intermediate layer, the first intermediate layer having a modulus of elasticity lower than the second copper layer; and bonding a chip to the first copper layer and a substrate to the second copper layer. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method of bonding a chip to a substrate utilizing at least one multi-layer copper interconnect pillar, comprising:
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providing a chip having a barrier and adhesion layer; forming a seed layer on the barrier and adhesion layer, the seed layer comprising one of chromium copper and copper; forming a first copper layer on the barrier and adhesion layer; forming a substantially planar first intermediate layer directly on the first copper layer, the first intermediate layer having a modulus of elasticity lower than the first copper layer; forming a second copper layer directly on the first intermediate layer, the first intermediate layer having a modulus of elasticity lower than the second copper layer; and bonding the resulting structure to a substrate, wherein the first intermediate layer is a single material comprising one of tin, bismuth and indium. - View Dependent Claims (9, 10, 11, 12, 13, 14, 15)
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16. A method of bonding a chip to a substrate utilizing at least one multi-layer copper interconnect pillar, comprising:
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providing a chip having a barrier and adhesion layer; forming a seed layer on the barrier and adhesion layer, the seed layer comprising one of chromium copper and copper; forming a first copper layer on the barrier and adhesion layer; forming a substantially planar first intermediate layer directly on the first copper layer, the first intermediate layer having a modulus of elasticity lower than the first copper layer; forming a second copper layer directly on the first intermediate layer, the first intermediate layer having a modulus of elasticity lower than the second copper layer; forming a second intermediate layer with nickel barrier protective layers on opposing surfaces thereof and directly on the second copper layer; forming a third copper layer on the second intermediate layer with the nickel barrier protective layers, each of the first and second intermediate layers having a modulus of elasticity lower than each of the first, second, and third copper layers; and bonding the resulting structure to a substrate. - View Dependent Claims (17, 18)
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19. A method of forming a copper interconnect pillar, the method comprising:
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forming a first copper layer; forming a first nickel barrier protective layer in direct contact on the first copper layer; forming a substantially planar first intermediate layer in direct contact with the first nickel barrier protective layer on the first copper layer, the first intermediate layer having a modulus of elasticity lower than the first copper layer, and the first intermediate layer being a single material comprising one of tin, bismuth and indium; forming a second nickel barrier protective layer in direct contact with the first intermediate layer, on a surface opposing the first nickel barrier protective layer; forming a second copper layer in direct contact with the second nickel barrier protective layer on an opposing side thereof to the first intermediate layer, the first intermediate layer having a modulus of elasticity lower than the second copper layer; forming a seed layer comprising one of chromium copper and copper; and forming the first copper layer in direct contact on the seed layer.
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Specification