Reactive site deactivation against vapor deposition
First Claim
Patent Images
1. A method of processing, comprising:
- providing an exposed surface;
supplying a first organic precursor having a first molecular chain length to adsorb a self-assembled monolayer over the exposed surface; and
supplying a second organic precursor having a second molecular chain length that is shorter than the first molecular chain length to adsorb onto reactive sites of the exposed surface on which a self-assembled monolayer is not adsorbed.
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Abstract
Methods and structures relating to the formation of mixed SAMs for preventing undesirable growth or nucleation on exposed surfaces inside a reactor are described. A mixed SAM can be formed on surfaces for which nucleation is not desired by introducing a first SAM precursor having molecules of a first length and a second SAM precursor having molecules of a second length shorter than the first. Examples of exposed surfaces for which a mixed SAM can be provided over include reactor surfaces and select surfaces of integrated circuit structures, such as insulator and dielectric layers.
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Citations
40 Claims
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1. A method of processing, comprising:
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providing an exposed surface; supplying a first organic precursor having a first molecular chain length to adsorb a self-assembled monolayer over the exposed surface; and supplying a second organic precursor having a second molecular chain length that is shorter than the first molecular chain length to adsorb onto reactive sites of the exposed surface on which a self-assembled monolayer is not adsorbed. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22)
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23. A method of processing with a vapor deposition reactor, comprising:
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supplying a first organic precursor to deposit a self-assembled monolayer over portions of a reactor surface; and supplying a second organic precursor to react with portions of the reactor surface on which the self-assembled monolayer was not deposited, wherein the chain of molecules in the second organic precursor is shorter than the chain of molecules in the first organic precursor. - View Dependent Claims (24, 25, 26, 27, 28)
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29. A method of forming a semiconductor device, comprising:
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providing an integrated circuit structure into a reaction chamber having a first surface and a second surface different from the first surface; introducing a first organic precursor into the reaction chamber to coat portions of the first surface with a self-assembled monolayer without coating the second surface; purging unreacted first organic precursor that does not coat the first surface from the reaction chamber; introducing a second organic precursor into the reaction chamber to react with reactive sites of the first surface that are not coated with the first organic precursor; and purging unreacted second organic precursor that does not react with reactive sites from the reaction chamber. - View Dependent Claims (30, 31, 32, 33)
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34. An integrated film structure, comprising:
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a first surface and a second adjacent surface different from the first exposed surface; and a mixed hydrophobic film adsorbed on the first surface without forming on the second surface, the film comprising a plurality of first chain organic molecules and a plurality of second chain organic molecules, the second chain organic molecules being shorter than the first chain organic molecules. - View Dependent Claims (35, 36, 37, 38, 39, 40)
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Specification