Semiconductor device and manufacturing method thereof

• US 8,293,661 B2
• Filed: 12/02/2010
• Issued: 10/23/2012
• Est. Priority Date: 12/08/2009
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamazaki, Shunpei
• Primary Examiner(s): Thai, Luan C
• Application Number:
  US12/958,682
• Publication Number:
  US 20110133180A1
• Time in Patent Office: 691 Days
• Field of Search: 438/787, 438/770, 438/795, 438/585
• US Class Current: 438/787
• CPC Class Codes: H01L 21/3003 Hydrogenation or deuterisation, e.g. using atomic hydrogen from a plasma
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H01L 29/78693 the semiconducting oxide being amorphous

Abstract

One embodiment of the present invention is to achieve high mobility in a device using an oxide semiconductor and provide a highly reliable display device. An oxide semiconductor layer including a crystal region in which c-axis is aligned in a direction substantially perpendicular to a surface is formed and an oxide insulating layer is formed over and in contact with the oxide semiconductor layer. Oxygen is supplied to the oxide semiconductor layer by third heat treatment. A nitride insulating layer containing hydrogen is formed over the oxide insulating layer and fourth heat treatment is performed, so that hydrogen is supplied at least to an interface between the oxide semiconductor layer and the oxide insulating layer.

Claims

1. A method for manufacturing a semiconductor device, comprising the steps of:

forming a gate electrode layer over a substrate having an insulating surface;

forming a first oxide insulating layer which covers the gate electrode layer;

forming a first oxide semiconductor layer over the gate electrode layer and the first oxide insulating layer;

performing first heat treatment so as to form a crystal region in which c-axis is aligned in a direction substantially perpendicular to a surface of the first oxide semiconductor layer;

forming a second oxide semiconductor layer over the first oxide semiconductor layer;

performing second heat treatment so as to crystallize at least a part of the second oxide semiconductor layer by causing crystal growth from the crystal region;

forming a source electrode layer and a drain electrode layer over the second oxide semiconductor layer;

forming a second oxide insulating layer which covers the second oxide semiconductor layer, the source electrode layer, and the drain electrode layer;

performing third heat treatment so as to supply oxygen to the second oxide semiconductor layer;

forming a nitride insulating layer containing hydrogen over the second oxide insulating layer; and

performing fourth heat treatment so as to supply hydrogen at least to an interface between the first oxide semiconductor layer and the first oxide insulating layer.

2. The method for manufacturing a semiconductor device according to claim 1, wherein the first heat treatment causes the crystal growth from the surface of the first oxide semiconductor layer toward an inside to form the crystal region.

3. The method for manufacturing a semiconductor device according to claim 1, wherein the step of forming the source electrode layer and the drain electrode layer includes the steps of:

forming a conductive layer over the second oxide semiconductor layer; and

etching the conductive layer.

4. The method for manufacturing a semiconductor device according to claim 1, wherein the crystal growth is occurred by using a crystal in the crystal region as a crystal seed.

5. The method for manufacturing a semiconductor device according to claim 1, wherein a hydrogen concentration in the nitride insulating layer is higher than or equal to 1×

10²¹ atoms/cm³.

6. The method for manufacturing a semiconductor device according to claim 1, wherein the first heat treatment is performed at higher than or equal to 450°

C. and lower than or equal to 850°

C. in a nitrogen atmosphere, an oxygen atmosphere, or a dry air atmosphere.

7. The method for manufacturing a semiconductor device according to claim 1, wherein the second heat treatment is performed at higher than or equal to 450°

C. and lower than or equal to 850°

C. in a nitrogen atmosphere, an oxygen atmosphere, or a dry air atmosphere.

8. The method for manufacturing a semiconductor device according to claim 1, wherein the third heat treatment is performed at higher than or equal to 200°

C. and lower than or equal to 450°

C.

9. The method for manufacturing a semiconductor device according to claim 1, wherein the fourth heat treatment is performed at higher than or equal to 150°

C. and lower than or equal to 450°

C.

10. A method for manufacturing a semiconductor device, comprising the steps of:

forming a first oxide semiconductor layer;

performing first heat treatment to the first oxide semiconductor layer so as to form a crystal region in which c-axis is aligned in a direction substantially perpendicular to a surface of the first oxide semiconductor layer;

forming a second oxide semiconductor layer over the first oxide semiconductor layer;

performing second heat treatment so as to crystallize at least a part of the second oxide semiconductor layer by causing crystal growth from the crystal region;

forming an oxide insulating layer which covers the second oxide semiconductor layer;

performing third heat treatment to the oxide insulating layer;

forming a nitride insulating layer containing hydrogen over the oxide insulating layer; and

performing fourth heat treatment to the nitride insulating layer containing hydrogen.

11. The method for manufacturing a semiconductor device according to claim 10, wherein the first oxide semiconductor layer is formed over a substrate having an insulating surface.