On-wafer butted microbolometer imaging array

• US 8,294,099 B2
• Filed: 04/09/2010
• Issued: 10/23/2012
• Est. Priority Date: 04/10/2009
• Status: Active Grant

• Current Assignee: BAE Systems Information and Electronic Systems Integration Incorporated (BAE Systems Plc)
• Original Assignee: BAE Systems Information and Electronic Systems Integration Incorporated (BAE Systems Plc)
• Inventors: Blackwell, Richard J. Jr.
• Primary Examiner(s): Hannaher, Constantine
• Application Number:
  US12/757,247
• Publication Number:
  US 20100258725A1
• Time in Patent Office: 928 Days
• Field of Search: 250/332, 250/338.1
• US Class Current: 250/332
• CPC Class Codes: H01L 27/14618 Containers
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: Y10T 29/4913 Assembling to base an electrical component, e.g., capacitor, etc.

Abstract

An apparatus and method for assembling a large microbolometer infrared imaging array from sub-arrays, including the step of forming a sub-array assembly of independent imaging arrays on the silicon wafer as the imaging sensor is being processed, whereby seams or gaps in a resulting image are avoided.

Claims

1. An on-wafer method for assembling a large microbolometer infrared imaging array from sub-arrays comprising the steps of:

providing a wafer; and

forming a super-array assembly of independent imaging arrays on said wafer as the imaging sensor is being processed without stitching or mechanically-butting, whereby seams or gaps in a resulting image are avoided;

said forming including modifying edge design of a plurality of focal plane arrays (FPAs);

modifying at least one FPA with mirroring;

modifying at least one FPA for left and right-handed versions;

providing reticles; and

forming an array from a plurality of said modified FPA subarrays on said wafer, whereby gaps in a resulting image are avoided.

2. The method of claim 1, wherein said step of forming a super-array assembly of independent imaging arrays comprises producing a gap dimension between arrays less than about approximately 2.5 mm.

3. The method of claim 1, wherein said step of forming a super-array assembly of independent imaging arrays comprises producing a gap dimension between arrays less than one pixel.

4. The method of claim 1, wherein said step of forming a super-array assembly of independent imaging arrays comprises producing a gap dimension between arrays limited only by photolithographic capabilities to a fraction of a pixel.

5. The method of claim 1, wherein said step of forming a super-array assembly of independent imaging arrays comprises four 1024×

768, 17 micron (μ

m), focal plane arrays (FPAs).

6. The method of claim 5, wherein aperture of said large microbolometer infrared imaging array is about approximately 44.5 mm.

7. The method of claim 5, wherein said FPAs operate at 30 Hz.

8. The method of claim 1, wherein said step of forming a super-array assembly of independent imaging arrays comprises forming left and right handed focal plane arrays (FPAs).

9. The method of claim 1, wherein said step of forming a super-array assembly of independent imaging arrays comprises forming mirror-image focal plane arrays (FPAs).

10. The method of claim 1, further comprising the step of:

modifying a base read out integrated circuit (ROIC) from a 1024×

768 format to a 2048×

1536 format.

11. The method of claim 10, wherein said large microbolometer infrared imaging array comprises 12 Mpixels.

12. The method of claim 1, wherein die size of said large microbolometer infrared imaging array is about approximately 40 mm by 40 mm.

13. The method of claim 1, wherein said step of forming a super-array assembly of independent imaging arrays comprises eliminating buffer pixels.

14. The method of claim 1, wherein said large microbolometer infrared imaging array is used for surveillance.

15. A method of on-wafer forming a large microbolometer infrared imaging array comprising:

modifying edge design of a plurality of focal plane arrays (FPAs);

modifying at least one FPA with mirroring;

modifying at least one FPA for left and right-handed versions;

providing reticles; and

forming an array from a plurality of said modified FPA subarrays on said wafer, whereby gaps in a resulting image are avoided.

16. The method of claim 15, further comprising the step of eliminating buffer pixels.

17. The method of claim 15, further comprising the step of moving alignment marks and metrology structures from the top and left sides of at least one FPA.

18. The method of claim 15, wherein said large microbolometer infrared imaging array comprises a night vision system.

19. The method of claim 15, wherein said large microbolometer infrared imaging array comprises a thermal weapon sight.

20. An on-wafer assembled large microbolometer infrared imaging array device fabricated comprising the steps of:

providing a wafer; and

forming a sub-array assembly of independent imaging arrays on said wafer as the imaging sensor is being processed, whereby seams or gaps in a resulting image are avoided;

said forming including modifying edge design of a plurality of focal plane arrays (FPAs);

modifying at least one FPA with mirroring;

modifying at least one FPA for left and right-handed versions;

providing reticles; and

forming an array from a plurality of said modified FPA subarrays on said wafer, whereby gaps in a resulting image are avoided.