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Integrated circuit devices including low-resistivity conductive patterns in recessed regions

  • US 8,294,131 B2
  • Filed: 06/30/2010
  • Issued: 10/23/2012
  • Est. Priority Date: 07/23/2009
  • Status: Active Grant
First Claim
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1. An integrated circuit device, comprising:

  • a substrate;

    a device isolation pattern on the substrate defining an active area therein, the active area including a doped region therein;

    a conductive pattern extending on the active area and electrically contacting the doped region, the conductive pattern having a lower resistivity than the doped region, wherein the conductive pattern is disposed in a recessed region having a bottom surface that is lower than a top surface of the active area;

    a channel pillar electrically contacting the doped region and extending therefrom in a direction away from the substrate;

    a conductive gate electrode on a sidewall of the channel pillar; and

    a gate dielectric layer between the gate electrode and the sidewall of the channel pillar.

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