Semiconductor device and manufacturing method the same
First Claim
1. A semiconductor device comprising:
- a gate electrode layer over a substrate having an insulating surface;
a gate insulating layer over the gate electrode layer;
an oxide semiconductor layer over the gate insulating layer;
a connection layer over the gate insulating layer;
a source electrode layer and a drain electrode layer over the oxide semiconductor layer;
an insulating film covering the gate insulating layer, the oxide semiconductor layer, the source electrode layer, the drain electrode layer, and the connection layer; and
a first gate wiring, a second gate wiring, and a source wiring over the insulating film,wherein the source wiring is electrically connected to the source electrode layer,wherein the first gate wiring is electrically connected to the gate electrode layer,wherein the first gate wiring is electrically connected to the second gate wiring through the connection layer, andwherein the connection layer overlaps the source wiring.
1 Assignment
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Accused Products
Abstract
An object is to manufacture and provide a highly reliable semiconductor device including a thin film transistor with stable electric characteristics. In a method for manufacturing a semiconductor device including a thin film transistor in which a semiconductor layer including a channel formation region serves as an oxide semiconductor film, heat treatment for reducing impurities such as moisture (heat treatment for dehydration or dehydrogenation) is performed after an oxide insulating film serving as a protective film is formed in contact with an oxide semiconductor layer. Then, the impurities such as moisture, which exist not only in a source electrode layer, in a drain electrode layer, in a gate insulating layer, and in the oxide semiconductor layer but also at interfaces between the oxide semiconductor film and upper and lower films which are in contact with the oxide semiconductor layer, are reduced.
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Citations
24 Claims
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1. A semiconductor device comprising:
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a gate electrode layer over a substrate having an insulating surface; a gate insulating layer over the gate electrode layer; an oxide semiconductor layer over the gate insulating layer; a connection layer over the gate insulating layer; a source electrode layer and a drain electrode layer over the oxide semiconductor layer; an insulating film covering the gate insulating layer, the oxide semiconductor layer, the source electrode layer, the drain electrode layer, and the connection layer; and a first gate wiring, a second gate wiring, and a source wiring over the insulating film, wherein the source wiring is electrically connected to the source electrode layer, wherein the first gate wiring is electrically connected to the gate electrode layer, wherein the first gate wiring is electrically connected to the second gate wiring through the connection layer, and wherein the connection layer overlaps the source wiring. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A semiconductor device comprising:
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a gate electrode layer over a substrate having an insulating surface; a connection layer over the substrate having the insulating surface; a gate insulating layer over the gate electrode layer and the connection layer; an oxide semiconductor layer over the gate insulating layer; a source electrode layer and a drain electrode layer over the oxide semiconductor layer; an insulating film covering the gate insulating layer, the oxide semiconductor layer, the source electrode layer, and the drain electrode layer; and a first gate wiring, a second gate wiring, and a source wiring over the insulating film, wherein the source wiring is electrically connected to the source electrode layer, wherein the first gate wiring is electrically connected to the gate electrode layer, wherein the first gate wiring is electrically connected to the second gate wiring through the connection layer, and wherein the connection layer overlaps the source wiring. - View Dependent Claims (8, 9, 10, 11, 12)
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13. A semiconductor device comprising:
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a gate electrode layer over a substrate having an insulating surface; a gate insulating layer over the gate electrode layer; an oxide semiconductor layer over the gate insulating layer; a connection layer over the gate insulating layer; a source electrode layer and a drain electrode layer over the oxide semiconductor layer; an insulating film covering the gate insulating layer, the oxide semiconductor layer, the source electrode layer, the drain electrode layer, and the connection layer; and a gate wiring, a first source wiring, and a second source wiring over the insulating film, wherein the first source wiring is electrically connected to the source electrode layer, wherein the gate wiring is electrically connected to the gate electrode layer, wherein the first source wiring is electrically connected to the second source wiring through the connection layer, and wherein the connection layer overlaps the gate wiring. - View Dependent Claims (14, 15, 16, 17, 18)
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19. A semiconductor device comprising:
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a gate electrode layer over a substrate having an insulating surface; a connection layer over the substrate having the insulating surface; a gate insulating layer over the gate electrode layer and the connection layer; an oxide semiconductor layer over the gate insulating layer; a source electrode layer and a drain electrode layer over the oxide semiconductor layer; an insulating film covering the gate insulating layer, the oxide semiconductor layer, the source electrode layer, and the drain electrode layer; and a gate wiring, a first source wiring, and a second source wiring over the insulating film, wherein the first source wiring is electrically connected to the source electrode layer, wherein the gate wiring is electrically connected to the gate electrode layer, wherein the first source wiring is electrically connected to the second source wiring through the connection layer, and wherein the connection layer overlaps the gate wiring. - View Dependent Claims (20, 21, 22, 23, 24)
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Specification