Method for fabrication of a semiconductor device and structure
First Claim
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1. A semiconductor device comprising:
- a first single crystal silicon layer comprising a plurality of first transistors and a plurality of first alignment marks;
at least two metal layers overlying said first single crystal silicon layer, wherein said metal layers comprise copper or aluminum more than other materials; and
a second thin single crystal silicon layer of less than 0.4 micron thickness overlying said at least two metal layers, wherein said second thin single crystal silicon layer comprises a plurality of second transistors, and wherein said second transistors comprise recessed channel transistors.
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Abstract
A method for fabrication of 3D semiconductor devices utilizing a layer transfer and steps for forming transistors on top of a pre-fabricated semiconductor device comprising transistors formed on crystallized semiconductor base layer and metal layer for the transistors interconnections and insulation layer. The advantage of this approach is reduction of the over all metal length used to interconnect the various transistors.
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Citations
7 Claims
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1. A semiconductor device comprising:
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a first single crystal silicon layer comprising a plurality of first transistors and a plurality of first alignment marks; at least two metal layers overlying said first single crystal silicon layer, wherein said metal layers comprise copper or aluminum more than other materials; and a second thin single crystal silicon layer of less than 0.4 micron thickness overlying said at least two metal layers, wherein said second thin single crystal silicon layer comprises a plurality of second transistors, and wherein said second transistors comprise recessed channel transistors. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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Specification