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Method for fabrication of a semiconductor device and structure

  • US 8,294,159 B2
  • Filed: 03/28/2011
  • Issued: 10/23/2012
  • Est. Priority Date: 10/12/2009
  • Status: Expired due to Fees
First Claim
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1. A semiconductor device comprising:

  • a first single crystal silicon layer comprising a plurality of first transistors and a plurality of first alignment marks;

    at least two metal layers overlying said first single crystal silicon layer, wherein said metal layers comprise copper or aluminum more than other materials; and

    a second thin single crystal silicon layer of less than 0.4 micron thickness overlying said at least two metal layers, wherein said second thin single crystal silicon layer comprises a plurality of second transistors, and wherein said second transistors comprise recessed channel transistors.

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