Transparent light emitting diodes
DCFirst Claim
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1. A device, comprising:
- a light emitting diode (LED) including a plurality of III-nitride layers, wherein;
the plurality of the III-nitride layers include an n-type layer, a p-type layer, and an active region between the n-type layer and the p-type layer that emits light, andan n-type side of the LED is on a front side of the LED, and a p-type side of the LED is on a back side of the LED opposite the front side;
a transparent substrate or sub-mount attached to the p-type side of the III-nitride layers only; and
one or more shaped optical elements combined with the LED and the transparent substrate or sub-mount, wherein the shaped optical elements and the transparent substrate or sub-mount extract light from the LED, such that the light is extracted through at least the front side and the back side of the LED.
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Abstract
A transparent light emitting diode (LED) includes a plurality of III-nitride layers, including an active region that emits light, wherein all of the layers except for the active region are transparent for an emission wavelength of the light, such that the light is extracted effectively through all of the layers and in multiple directions through the layers. Moreover, the surface of one or more of the III-nitride layers may be roughened, textured, patterned or shaped to enhance light extraction.
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Citations
42 Claims
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1. A device, comprising:
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a light emitting diode (LED) including a plurality of III-nitride layers, wherein; the plurality of the III-nitride layers include an n-type layer, a p-type layer, and an active region between the n-type layer and the p-type layer that emits light, and an n-type side of the LED is on a front side of the LED, and a p-type side of the LED is on a back side of the LED opposite the front side; a transparent substrate or sub-mount attached to the p-type side of the III-nitride layers only; and one or more shaped optical elements combined with the LED and the transparent substrate or sub-mount, wherein the shaped optical elements and the transparent substrate or sub-mount extract light from the LED, such that the light is extracted through at least the front side and the back side of the LED. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21)
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22. A method of fabricating a device, comprising:
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forming a Light Emitting Diode (LED), wherein the LED comprises; a plurality of III-nitride layers including an n-type layer, a p-type layer, and an active region between the n-type layer and the p-type layer that emits light, and an n-type side of the LED is on a front side of the LED, and a p-type side of the LED is on a back side of the LED opposite the front side; attaching a transparent substrate or sub-mount to a p-type side of the III-nitride layers only; and forming one or more shaped optical elements combined with the LED and the transparent substrate or sub-mount, wherein the shaped optical elements and the transparent substrate or sub-mount extract light from the LED, such that the light is extracted through at least the front side and the back side of the LED. - View Dependent Claims (23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42)
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Specification