Method of fabricating vertical devices using a metal support film
First Claim
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1. A vertical topology light emitting diode, comprising:
- an adhesion structure comprising a first metal layer having a first surface and a second metal layer having a second surface;
a conductive support structure over the first surface;
a reflective structure over the second surface, the reflective structure also serving as a first electrical contact;
a semiconductor device over the reflective structure, the semiconductor device comprising a first-type GaN-based layer, an active layer on the first-type GaN-based layer, and a second-type GaN-based layer on the active layer; and
a second electrical contact over a surface of the semiconductor device,wherein the reflective structure and the second electrical contact are located over opposite surfaces of the semiconductor device, respectively,wherein the reflective structure comprises a reflective metal layer over the second surface of the adhesion structure and a metal contact directly on a surface of the reflective metal layer, wherein the reflective metal layer is thicker than the metal contact, wherein the metal contact contacts the first-type GaN-based layer,wherein the reflective structure reflects light from the semiconductor device on the surface of the reflective metal layer, wherein the surface of the reflective metal layer is a dominant reflective surface,wherein the reflective metal layer is a pure metal layer,wherein the first metal layer is thicker than the second metal layer, andwherein the reflective metal layer of the reflective structure and the first metal layer of the adhesion structure comprise different materials and wherein the reflective metal layer and the metal contact comprise different materials.
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Abstract
A method of fabricating semiconductor devices, such as GaN LEDs, on insulating substrates, such as sapphire. Semiconductor layers are produced on the insulating substrate using normal techniques. Trenches that define the boundaries of the individual devices are formed through the semiconductor layers and into the insulating substrate, beneficially by inductive coupled plasma reactive ion etching. A first support structure is attached to the semiconductor layers. The hard substrate is then removed, beneficially by laser lift off. A second supporting structure, preferably conductive, is substituted for the hard substrate and the first supporting structure is removed. Individual devices are then diced, beneficially by etching through the second supporting structure. A protective photo-resist layer can protect the semiconductor layers from the attachment of the first support structure. A conductive bottom contact (possibly reflective) can be inserted between the second supporting structure and the semiconductor layers.
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Citations
51 Claims
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1. A vertical topology light emitting diode, comprising:
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an adhesion structure comprising a first metal layer having a first surface and a second metal layer having a second surface; a conductive support structure over the first surface; a reflective structure over the second surface, the reflective structure also serving as a first electrical contact; a semiconductor device over the reflective structure, the semiconductor device comprising a first-type GaN-based layer, an active layer on the first-type GaN-based layer, and a second-type GaN-based layer on the active layer; and a second electrical contact over a surface of the semiconductor device, wherein the reflective structure and the second electrical contact are located over opposite surfaces of the semiconductor device, respectively, wherein the reflective structure comprises a reflective metal layer over the second surface of the adhesion structure and a metal contact directly on a surface of the reflective metal layer, wherein the reflective metal layer is thicker than the metal contact, wherein the metal contact contacts the first-type GaN-based layer, wherein the reflective structure reflects light from the semiconductor device on the surface of the reflective metal layer, wherein the surface of the reflective metal layer is a dominant reflective surface, wherein the reflective metal layer is a pure metal layer, wherein the first metal layer is thicker than the second metal layer, and wherein the reflective metal layer of the reflective structure and the first metal layer of the adhesion structure comprise different materials and wherein the reflective metal layer and the metal contact comprise different materials. - View Dependent Claims (2, 3, 4, 5, 6, 7, 10, 12, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 35, 36, 37, 39, 42, 44, 46, 47, 50)
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8. A vertical topology light emitting diode, comprising:
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a reflective structure comprising a reflective metal layer having a first side and a metal contact having a second side, the reflective structure also serving as a first electrical contact, wherein the metal contact is directly on a surface of the reflective metal layer, wherein the reflective metal layer is thicker than the metal contact, wherein the reflective metal layer is a pure metal layer, and wherein the reflectivity of the reflective metal layer is higher than the reflectivity of the metal contact; an adhesion structure over the first side of the reflective structure, the adhesion structure comprising a first metal layer and a second metal layer; a conductive support structure over the adhesion structure; a semiconductor device over the second side of the reflective structure, the semiconductor device comprising a first-type GaN-based layer, an active layer, and a second-type GaN-based layer; and a second electrical contact over a surface of the semiconductor device, wherein the reflective structure reflects light from the semiconductor device on the surface of the reflective metal layer, wherein the surface of the reflective metal layer is a dominant reflective surface, wherein the reflective structure and the second electrical contact are located over opposite surfaces of the semiconductor device, respectively, and wherein the metal contact contacts the first-type GaN-based layer, wherein the first metal layer is located proximate to the conductive support structure and the second metal layer is located proximate to the reflective structure, wherein the first metal layer is thicker than the second metal layer, and wherein the reflective metal layer of the reflective structure and the first metal layer of the adhesion structure comprise different materials and wherein the reflective metal layer and the metal contact comprise different materials. - View Dependent Claims (9, 11, 13, 14, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 38, 40, 41, 43, 45, 48, 49, 51)
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Specification
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Current AssigneeSuzhou Lekin Semiconductor Company Limited
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Original AssigneeLG Electronics, Inc. (LG Corporation)
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InventorsYoo, Myung Cheol
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Primary Examiner(s)Vu, David
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Assistant Examiner(s)NGUYEN, DUY T V
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Application NumberUS10/118,317Publication NumberTime in Patent Office3,850 DaysField of Search257 79-103, 257/E33.023US Class Current257/99CPC Class CodesH01L 33/007 comprising nitride compoundsH01L 33/0093 Wafer bonding; Removal of t...H01L 33/0095 Post-treatment of devices, ...H01L 33/04 with a quantum effect struc...H01L 33/12 with a stress relaxation st...H01L 33/14 with a carrier transport co...H01L 33/32 containing nitrogenH01L 33/38 with a particular shapeH01L 33/405 Reflective materialsH01L 33/42 Transparent materialsH01L 33/46 Reflective coating, e.g. di...H01L 33/54 having a particular shapeH01L 33/60 Reflective elementsH01L 33/62 Arrangements for conducting...H01L 33/641 characterized by the materialsH01L 33/647 the elements conducting ele...
