×

CMOS devices with a single work function gate electrode and method of fabrication

  • US 8,294,180 B2
  • Filed: 03/01/2011
  • Issued: 10/23/2012
  • Est. Priority Date: 09/28/2005
  • Status: Active Grant
First Claim
Patent Images

1. A pair of pMOS transistors, comprising:

  • a first SiGe channel region on a first region of a silicon substrate, the first SiGe channel region having a first concentration of Ge;

    a second SiGe channel region on a second region of the silicon substrate, the second SiGe channel region having a second concentration of Ge, different than the first concentration of Ge;

    a gate insulator on the first and second SiGe channel regions;

    a first gate electrode on the gate insulator over the first SiGe channel region;

    a second gate electrode on the gate insulator over the second SiGe channel region, wherein the first gate electrode and the second gate electrode have a same mid-gap work function to provide a first of the pair of pMOS transistors with a threshold voltage that is different than a second of the pair of pMOS transistors; and

    a p-type doped source and drain on opposite sides of both the first and second gate electrodes.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×