CMOS devices with a single work function gate electrode and method of fabrication
First Claim
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1. A pair of pMOS transistors, comprising:
- a first SiGe channel region on a first region of a silicon substrate, the first SiGe channel region having a first concentration of Ge;
a second SiGe channel region on a second region of the silicon substrate, the second SiGe channel region having a second concentration of Ge, different than the first concentration of Ge;
a gate insulator on the first and second SiGe channel regions;
a first gate electrode on the gate insulator over the first SiGe channel region;
a second gate electrode on the gate insulator over the second SiGe channel region, wherein the first gate electrode and the second gate electrode have a same mid-gap work function to provide a first of the pair of pMOS transistors with a threshold voltage that is different than a second of the pair of pMOS transistors; and
a p-type doped source and drain on opposite sides of both the first and second gate electrodes.
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Abstract
Described herein are a device utilizing a gate electrode material with a single work function for both the pMOS and nMOS transistors where the magnitude of the transistor threshold voltages is modified by semiconductor band engineering and article made thereby. Further described herein are methods of fabricating a device formed of complementary (pMOS and nMOS) transistors having semiconductor channel regions which have been band gap engineered to achieve a low threshold voltage.
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14 Claims
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1. A pair of pMOS transistors, comprising:
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a first SiGe channel region on a first region of a silicon substrate, the first SiGe channel region having a first concentration of Ge; a second SiGe channel region on a second region of the silicon substrate, the second SiGe channel region having a second concentration of Ge, different than the first concentration of Ge; a gate insulator on the first and second SiGe channel regions; a first gate electrode on the gate insulator over the first SiGe channel region; a second gate electrode on the gate insulator over the second SiGe channel region, wherein the first gate electrode and the second gate electrode have a same mid-gap work function to provide a first of the pair of pMOS transistors with a threshold voltage that is different than a second of the pair of pMOS transistors; and a p-type doped source and drain on opposite sides of both the first and second gate electrodes. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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