Semiconductor substrate, method of fabricating the same, semiconductor device, and method of fabricating the same
First Claim
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1. A semiconductor substrate, comprising:
- a substrate;
a first semiconductor layer arranged on the substrate;
a metallic material layer arranged on the first semiconductor layer;
a second semiconductor layer in direct physical contact with the first semiconductor layer and the metallic material layer; and
voids formed in the first semiconductor layer under the metallic material layer.
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Abstract
The present invention provides a fabrication method of a semiconductor substrate, by which a planar GaN substrate that is easily separated can be fabricated on a heterogeneous substrate, and a semiconductor device which is fabricated using the GaN substrate. The semiconductor substrate comprises a substrate, a first semiconductor layer arranged on the substrate, a metallic material layer arranged on the first semiconductor layer, a second semiconductor layer arranged on the first semiconductor layer and the metallic material layer, and voids formed in the first semiconductor layer under the metallic material layer.
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Citations
25 Claims
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1. A semiconductor substrate, comprising:
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a substrate; a first semiconductor layer arranged on the substrate; a metallic material layer arranged on the first semiconductor layer; a second semiconductor layer in direct physical contact with the first semiconductor layer and the metallic material layer; and voids formed in the first semiconductor layer under the metallic material layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 22, 23)
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8. A method of fabricating a semiconductor substrate, comprising:
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forming a first semiconductor layer on a substrate; forming a metallic material layer on the first semiconductor layer; and forming a second semiconductor layer directly on the first semiconductor layer and the metallic material layer, wherein voids are formed in the first semiconductor layer under the metallic material layer while the second semiconductor layer is formed, and wherein the first semiconductor layer contacts the second semiconductor layer. - View Dependent Claims (9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 24, 25)
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Specification