High-power device having thermocouple embedded therein and method for manufacturing the same
First Claim
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1. A high-power device, comprising:
- a heating element;
a thermocouple formed adjacent to the heating element;
a dielectric body formed between the heating element and the thermocouple;
wherein the thermocouple includes first and second thin films made of two kinds of metals and alloys;
wherein one end of each the first and the second thin films are joined to each other to form a hot junction;
a via contact connected to the thermocouple; and
a pad for connecting the via contact to an external lead frame;
wherein, a temperature difference of two sides of the hot junction in the first and the second thin films of the thermocouple causes a thermoelectromotive force to be generated between the two sides of the hot junction by a seebeck effect, a thermal current flows according to the thermoelectromotive force, such that a temperature of the high-power device is measured by measuring the thermal current;
wherein the thermoelectromotive force is determined by a temperature difference between the two sides of the hot junction; and
wherein the measured thermoelectromotive force is proportional to the temperature.
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Abstract
Provided is a high-power device having a thermocouple (thermoelectric couple) for measuring the temperature of a transistor constituting a high-power device. The high-power device includes a heating element, a thermocouple formed adjacent to the heating element, and a dielectric body formed between the heating element and the thermocouple.
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Citations
4 Claims
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1. A high-power device, comprising:
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a heating element; a thermocouple formed adjacent to the heating element; a dielectric body formed between the heating element and the thermocouple; wherein the thermocouple includes first and second thin films made of two kinds of metals and alloys; wherein one end of each the first and the second thin films are joined to each other to form a hot junction; a via contact connected to the thermocouple; and a pad for connecting the via contact to an external lead frame; wherein, a temperature difference of two sides of the hot junction in the first and the second thin films of the thermocouple causes a thermoelectromotive force to be generated between the two sides of the hot junction by a seebeck effect, a thermal current flows according to the thermoelectromotive force, such that a temperature of the high-power device is measured by measuring the thermal current; wherein the thermoelectromotive force is determined by a temperature difference between the two sides of the hot junction; and wherein the measured thermoelectromotive force is proportional to the temperature. - View Dependent Claims (2, 3, 4)
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Specification