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Panelized backside processing for thin semiconductors

  • US 8,294,280 B2
  • Filed: 05/07/2009
  • Issued: 10/23/2012
  • Est. Priority Date: 05/07/2009
  • Status: Active Grant
First Claim
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1. A semiconductor device, comprising:

  • a substrate;

    a first die having a through substrate via, a first surface and a second surface opposite the first surface, the first surface being supported by the substrate;

    a packaging connection between the substrate and the first die, the packaging connection coupled to the through substrate via to facilitate communication between the substrate and the first die;

    a first molding compound between the substrate and the first die, the first molding compound partially surrounding the first die, a sidewall of the first molding compound being flush with a sidewall of the substrate; and

    an isolation layer supported in part by the first molding compound, the isolation layer extending substantially a length of the substrate.

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