Panelized backside processing for thin semiconductors
First Claim
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1. A semiconductor device, comprising:
- a substrate;
a first die having a through substrate via, a first surface and a second surface opposite the first surface, the first surface being supported by the substrate;
a packaging connection between the substrate and the first die, the packaging connection coupled to the through substrate via to facilitate communication between the substrate and the first die;
a first molding compound between the substrate and the first die, the first molding compound partially surrounding the first die, a sidewall of the first molding compound being flush with a sidewall of the substrate; and
an isolation layer supported in part by the first molding compound, the isolation layer extending substantially a length of the substrate.
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Abstract
A semiconductor manufacturing method includes attaching a first die to a substrate panel. The method also includes applying a mold compound after attaching the first die to the substrate panel to the first die and the substrate panel. The method further includes thinning the first die and the mold compound after applying the mold compound. Attaching the die to the substrate panel before thinning eliminates usage of a carrier wafer when processing thin semiconductors.
8 Citations
7 Claims
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1. A semiconductor device, comprising:
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a substrate; a first die having a through substrate via, a first surface and a second surface opposite the first surface, the first surface being supported by the substrate; a packaging connection between the substrate and the first die, the packaging connection coupled to the through substrate via to facilitate communication between the substrate and the first die; a first molding compound between the substrate and the first die, the first molding compound partially surrounding the first die, a sidewall of the first molding compound being flush with a sidewall of the substrate; and an isolation layer supported in part by the first molding compound, the isolation layer extending substantially a length of the substrate. - View Dependent Claims (2, 3, 4, 7)
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5. A semiconductor device, comprising:
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a die having a through substrate via and a first surface supported by a substrate; a packaging connection between the substrate and the die, the packaging connection coupled to the through substrate via to facilitate communication between the substrate and the die; means for encapsulating the die, the encapsulating means being between the substrate and the die and partially surrounding the die, a sidewall of the encapsulating means being flush with a sidewall of the substrate; and means for electrically isolating the die, the isolation means supported in part by the encapsulating means, the isolation means extending substantially a length of the substrate. - View Dependent Claims (6)
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Specification