×

Non-volatile memory device having vertical structure and method of operating the same

  • US 8,295,089 B2
  • Filed: 02/02/2010
  • Issued: 10/23/2012
  • Est. Priority Date: 02/02/2009
  • Status: Active Grant
First Claim
Patent Images

1. A non-volatile memory device having a vertical structure, the non-volatile memory device comprising:

  • a substrate;

    a semiconductor pole formed on the substrate to extend vertically with respect to the substrate;

    a NAND string formed on the substrate to extend vertically with respect to the substrate and along sidewalls of the semiconductor pole, the NAND string comprising a plurality of memory cells arranged in series and at least one pair of first selection transistors adjacent to the plurality of memory cells;

    a plurality of word lines coupled to the plurality of memory cells of the NAND string; and

    a first selection line commonly coupled to the at least one pair of first selection transistors of the NAND string.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×