Processor instruction cache with dual-read modes
First Claim
1. A processor comprising:
- a cache memory comprising an array of memory cells;
a decoder configured to (i) generate a first word line signal to access first instructions stored in a first word line of the array of memory cells, and (ii) generate a second word line signal to access second instructions stored in the first word line or a second word line of the array of memory cells;
a precharge circuit configured to (i) precharge first bit lines connected to the first word line during a first precharge event and prior to accessing the first instructions, and (ii) precharge the first bit lines during a second precharge event and prior to accessing the second instructions, wherein the second precharge event is subsequent to the first precharge event;
a control module configured to, during the first precharge event, adjust a rate of a clock signal from a first rate to a second rate; and
an amplifier module configured toaccess the first instructions based on (i) the first word line signal and (ii) the clock signal at the first rate, andaccess the second instructions based on (i) the second word line signal and (ii) the clock signal at the second rate.
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Accused Products
Abstract
A processor including a cache memory, a decoder, a precharge circuit, a control module, and an amplifier module. The decoder generates a first word line signal to access first instructions stored in a first word line, and (ii) generates a second word line signal to access second instructions stored in the first word line or a second word line. The precharge circuit (i) precharges first bit lines connected to the first word line prior to accessing each of the first and second instructions. The control module adjusts a rate of a clock signal from a first rate to a second rate. The amplifier module accesses the first instructions based on (i) the first word line signal and (ii) the clock signal at the first rate, and accesses the second instructions based on (i) the second word line signal and (ii) the clock signal at the second rate.
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Citations
20 Claims
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1. A processor comprising:
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a cache memory comprising an array of memory cells; a decoder configured to (i) generate a first word line signal to access first instructions stored in a first word line of the array of memory cells, and (ii) generate a second word line signal to access second instructions stored in the first word line or a second word line of the array of memory cells; a precharge circuit configured to (i) precharge first bit lines connected to the first word line during a first precharge event and prior to accessing the first instructions, and (ii) precharge the first bit lines during a second precharge event and prior to accessing the second instructions, wherein the second precharge event is subsequent to the first precharge event; a control module configured to, during the first precharge event, adjust a rate of a clock signal from a first rate to a second rate; and an amplifier module configured to access the first instructions based on (i) the first word line signal and (ii) the clock signal at the first rate, and access the second instructions based on (i) the second word line signal and (ii) the clock signal at the second rate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17)
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18. A method comprising:
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generating a first word line signal to access first instructions stored in a first word line of an array of memory cells of a cache memory, generating a second word line signal to access second instructions stored in the first word line or a second word line of the array of memory cells, precharging first bit lines connected to the first word line during a first precharge event and prior to accessing the first instructions, precharging the first bit lines during a second precharge event and prior to accessing the second instructions, wherein the second precharge event is subsequent to the first precharge event, adjusting a rate of a clock signal from a first rate to a second rate during the first precharge event, accessing the first instructions in response to the first word line signal and based on the clock signal at the first rate, and accessing the second instructions in response to the second word line signal and based on the clock signal at the second rate. - View Dependent Claims (19, 20)
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Specification