MEMS devices having support structures with substantially vertical sidewalls and methods for fabricating the same
First Claim
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1. A method of fabricating a MEMS device, comprising:
- providing a substrate;
depositing an electrode layer over the substrate;
depositing a sacrificial layer over the electrode layer;
depositing a movable layer over the sacrificial layer;
patterning the movable layer to form an aperture extending through the movable layer, thereby exposing a portion of the sacrificial layer;
etching the exposed portion of the sacrificial layer to form a cavity extending through the sacrificial layer and undercutting a portion of the movable layer; and
depositing a layer of self-planarizing support material to fill the cavity.
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Abstract
Embodiments of MEMS devices include support structures having substantially vertical sidewalls. Certain support structures are formed through deposition of self-planarizing materials or via a plating process. Other support structures are formed via a spacer etch. Other MEMS devices include support structures at least partially underlying a movable layer, where the portions of the support structures underlying the movable layer include a convex sidewall. In further embodiments, a portion of the support structure extends through an aperture in the movable layer and over at least a portion of the movable layer.
274 Citations
24 Claims
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1. A method of fabricating a MEMS device, comprising:
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providing a substrate; depositing an electrode layer over the substrate; depositing a sacrificial layer over the electrode layer; depositing a movable layer over the sacrificial layer; patterning the movable layer to form an aperture extending through the movable layer, thereby exposing a portion of the sacrificial layer; etching the exposed portion of the sacrificial layer to form a cavity extending through the sacrificial layer and undercutting a portion of the movable layer; and depositing a layer of self-planarizing support material to fill the cavity. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A MEMS device, comprising:
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a substrate; an electrode layer located over the substrate; a movable layer located over the electrode layer, wherein the movable layer is generally spaced apart from the electrode layer by an air gap, said movable layer comprising an aperture extending through the movable layer; and a support structure located at least partially beneath the aperture in the movable layer, said support structure comprising a convex sidewall portion located underneath the movable layer. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20)
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21. A MEMS device, comprising:
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first means for electrically conducting; second means for electrically conducting; and means for supporting said second conducting means over said first conducting means, wherein said second conducting means is movable relative to said first conducting means in response to generating electrostatic potential between said first and second conducting means, and wherein said supporting means extend through an aperture in said second conducting means and enclose at least a portion of said second conducting means. - View Dependent Claims (22, 23, 24)
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Specification