Vertical LDMOS device and method for fabricating same
First Claim
1. A vertically arranged laterally diffused metal-oxide-semiconductor (LDMOS) device comprising:
- a trench within a semiconductor body, and a semiconductor substrate underlying said semiconductor body, said trench including sidewalls, a bottom portion, a dielectric material lining said trench and a diffusion agent layer lining said dielectric material;
a lightly doped drain region extending laterally from said sidewalls of said trench into said semiconductor body.
2 Assignments
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Accused Products
Abstract
A vertically arranged laterally diffused metal-oxide-semiconductor (LDMOS) device comprises a trench extending into a semiconductor body toward a semiconductor substrate. The trench includes sidewalls, a bottom portion connecting the sidewalls, a dielectric material lining the trench and a diffusion agent layer lining the dielectric material. A lightly doped drain region adjoins the trench and extends laterally around the sidewalls from the diffusion agent layer into the semiconductor body. In one embodiment, a method for fabricating a vertically arranged LDMOS device comprises forming a trench extending into a semiconductor body toward a semiconductor substrate, the trench including sidewalls, a bottom portion connecting the sidewalls, a dielectric material lining the trench and a diffusion agent layer lining the dielectric material. The method further comprises diffusing impurities from the diffusion agent layer through the dielectric material to form a lightly doped drain region extending laterally around the sidewalls into the semiconductor body.
10 Citations
13 Claims
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1. A vertically arranged laterally diffused metal-oxide-semiconductor (LDMOS) device comprising:
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a trench within a semiconductor body, and a semiconductor substrate underlying said semiconductor body, said trench including sidewalls, a bottom portion, a dielectric material lining said trench and a diffusion agent layer lining said dielectric material; a lightly doped drain region extending laterally from said sidewalls of said trench into said semiconductor body. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A vertically arranged laterally diffused metal-oxide-semiconductor (LDMOS) device comprising:
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first and second trenches each extending into a semiconductor body, and a semiconductor substrate underlying said semiconductor body; a first lightly doped drain region adjoining said first trench and a second lightly doped drain region adjoining said second trench; wherein said first and second lightly doped drain regions are spaced laterally apart by said semiconductor body. - View Dependent Claims (10, 11, 12, 13)
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Specification