Nonvolatile memory device and related programming method
First Claim
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1. A nonvolatile memory device, comprising:
- a memory cell array comprising a plurality of memory blocks each divided into a plurality of regions; and
a control logic component configured to select one of the memory blocks to be programmed based on a program or erase count of each of the respective memory blocks, and further configured to determine a program rule to be applied to the selected memory block based on program or erase counts of the respective regions of the selected memory block.
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Abstract
A nonvolatile memory device comprises a memory cell array comprising a plurality of memory blocks each divided into a plurality of regions, and a control logic component. The control logic component selects a memory block to be programmed based on program/erase cycles of the memory blocks, and selects a program rule used to program the regions of the selected memory block.
42 Citations
16 Claims
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1. A nonvolatile memory device, comprising:
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a memory cell array comprising a plurality of memory blocks each divided into a plurality of regions; and a control logic component configured to select one of the memory blocks to be programmed based on a program or erase count of each of the respective memory blocks, and further configured to determine a program rule to be applied to the selected memory block based on program or erase counts of the respective regions of the selected memory block. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A method of programming a nonvolatile memory device, comprising:
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selecting a memory block having a low program or erase count from a plurality of memory blocks; selecting a program rule to be applied to the selected memory block based on information regarding program or erase counts of respective regions within the selected memory block; and programming one of the regions of the selected memory block using the selected program rule. - View Dependent Claims (12, 13, 14, 15, 16)
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Specification