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Two terminal programmable hot channel electron non-volatile memory

  • US 8,300,470 B2
  • Filed: 04/04/2011
  • Issued: 10/30/2012
  • Est. Priority Date: 11/01/2007
  • Status: Expired due to Fees
First Claim
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1. A two terminal programmable non-volatile device situated on a substrate, the device comprising:

  • a first diffusion region coupled to a first terminal; and

    a second diffusion region coupled to a second terminal; and

    a channel coupling said first diffusion region and second diffusion region;

    a floating gate comprised of polysilicon, which floating gate is situated over at least a portion of said channel;

    wherein the device is adapted such that a channel hot electron current can be induced in said channel by a voltage potential imposed across said first terminal and said second terminal by a single program voltage, and which voltage potential is sufficient to cause injection into said floating gate and program the device,wherein the first diffusion region overlaps a sufficient areal portion of said floating gate to permit a threshold voltage of the device to be controlled by a coupling ratio determined by said areal portion and said single program voltage applied to said second diffusion region.

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