Stacked CMOS power amplifier and RF coupler devices and related methods

• US 8,301,106 B2
• Filed: 02/10/2010
• Issued: 10/30/2012
• Est. Priority Date: 02/10/2010
• Status: Active Grant

• Current Assignee: Avago Technologies International Sales Pte Limited (Broadcom, Inc.)
• Original Assignee: Javelin Semiconductor, Inc. (Broadcom, Inc.)
• Inventors: Misra, Abhay
• Primary Examiner(s): Lee, John J
• Application Number:
  US12/658,294
• Publication Number:
  US 20110195677A1
• Time in Patent Office: 993 Days
• Field of Search: 455/83, 455/127.1, 455/73, 455/106, 455/78, 455/333, 455/550.1, 455/82, 455/88, 455/334, 455/152.2, 455/343.1, 455/344, 455/77, 330/310, 330/285, 330/305
• US Class Current: 455/333
• CPC Class Codes: H01L 2224/16225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H03F 2200/204 A hybrid coupler being used at the output of an amplifier circuit
• CPC Class Codes: H03F 3/195 in integrated circuits
• CPC Class Codes: H03F 3/24 of transmitter output stages
• CPC Class Codes: H03G 3/3042 in modulators, frequency-changers, transmitters or power amplifiers transmission power control in bidirectional transmission systems H04W52/04
• CPC Class Codes: Y10T 29/49117 Conductor or circuit manufacturing

Abstract

Stacked CMOS power amplifier (PA) and radio frequency (RF) coupler devices and related methods are disclosed. The stacked device includes a CMOS PA die configured to receive a transmit input signal and to output an amplified transmit signal, and a RF coupler device configured to receive the amplified transmit signal, to output an antenna transmit signal, and to output an RF signal proportional to the antenna transmit signal. The CMOS PA die and the RF coupler device are stacked on top of and electrically coupled to each other, and the CMOS PA die and the RF coupler device are combined within a single semiconductor package. In some embodiments, the RF coupler device is positioned on top of the CMOS PA die, and in other embodiments the CMOS PA die is positioned on top of the RF coupler device.

Claims

1. A communication device, comprising:

an integrated circuit configured to output a transmit signal and to receive a feedback RF signal;

a stacked CMOS power amplifier (PA) and radio frequency (RF) coupler device, comprising;

a CMOS power amplifier (PA) die configured to receive the transmit signal and to output an amplified transmit signal; and

a radio frequency (RF) coupler device configured to receive the amplified transmit signal, to output an antenna transmit signal, and to output a feedback RF signal proportional to the antenna transmit signal;

wherein the CMOS PA die and the RF coupler device are stacked on top of and electrically coupled to each other; and

wherein the CMOS PA die and the RF coupler device are combined within a single semiconductor package;

wherein the integrated circuit is further configured to utilize the feedback RF signal to provide a transmit power control signal to the CMOS power amplifier die within the stacked CMOS power amplifier (PA) and radio frequency (RF) coupler device.

2. The communication device of claim 1, further comprising an antenna coupled to an antenna switch and a duplexer coupled between the antenna switch and the RF coupler device.

3. The communication device of claim 1, wherein the RF coupler device is positioned on top of the CMOS PA die.

4. The communication device of claim 3, wherein the RF coupler device comprises a CMOS coupler device integrated directly on top of the CMOS PA die.

5. The communication device of claim 3, wherein the RF coupler device comprises a CMOS coupler device mounted on top of the CMOS PA die.

6. The communication device of claim 1, wherein the CMOS PA die is positioned on top of the RF coupler device.

7. The communication device of claim 6, wherein the RF coupler device comprises an RF coupler embedded within a ceramic package.

8. The communication device of claim 6, wherein the CMOS PA die is mounted on top of the ceramic package.

9. A method for communicating radio frequency (RF) signals, comprising:

operating a stacked CMOS power amplifier (PA) and radio frequency (RF) coupler device, comprising;

a CMOS power amplifier (PA) die configured to receive the transmit signal and to output an amplified transmit signal; and

a radio frequency (RF) coupler device configured to receive the amplified transmit signal, to output an antenna transmit signal, and to output a feedback RF signal proportional to the antenna transmit signal;

wherein the CMOS PA die and the RF coupler device are stacked on top of and electrically coupled to each other; and

wherein the CMOS PA die and the RF coupler device are combined within a single semiconductor package;

generating a transmit signal;

amplifying the transmit signal with the CMOS PA die;

utilizing the RF coupler device to output the antenna transmit signal to an antenna;

further utilizing the RF coupler device to provide a feedback RF signal; and

using the feedback RF signal to control at least in part the amplifying step.

10. The method of claim 9, wherein the RF coupler device is positioned on top of the CMOS PA die.

11. The method of claim 9, wherein the CMOS PA die is positioned on top of the RF coupler device.