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Insulated nanogap devices and methods of use thereof

  • US 8,304,273 B2
  • Filed: 01/23/2009
  • Issued: 11/06/2012
  • Est. Priority Date: 01/24/2008
  • Status: Expired due to Fees
First Claim
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1. A process for preparing a nanogap device for measuring changes in electrical properties or electrical responses of a sub-micron sized material, said device comprising:

  • (a) a substrate; and

    (b) at least one conducting electrode pair separated by a nanogap positioned on or within said substrate, whereini. a first portion of said conducting electrode pair comprises an insulator coating; and

    ii. a second portion of said conducting electrode pair proximal to said nanogap does not comprise an insulator coating,said process comprising;

    a. positioning a conducting material on a substrate wherein said material has a longitudinal axis which exceeds that of its horizontal axis, wherein said conducting material comprises a second portion of said material along its longitudinal axis, which is thinner than a first portion of said material along its longitudinal axis;

    b. applying an insulator coating to said conducting material; and

    c. applying a voltage to said conducting material;

    wherein application of said voltage results in forming a gap in said second portion and at least partial removal of said insulator coating of said second portion.

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