×

Fabrication of devices having different interfacial oxide thickness via lateral oxidation

  • US 8,304,306 B2
  • Filed: 03/28/2011
  • Issued: 11/06/2012
  • Est. Priority Date: 03/28/2011
  • Status: Active Grant
First Claim
Patent Images

1. A method for forming a semiconductor device, the method comprising:

  • forming a first field effect transistor (FET) and a second FET on a substrate, the first FET comprising a first interfacial oxide layer, and the second FET comprising a second interfacial oxide layer;

    encapsulating the first interfacial oxide layer of the first FET; and

    performing lateral oxidation of the second interfacial oxide layer of the second FET, wherein the lateral oxidation of the second interfacial oxide layer of the second FET converts a portion of the substrate located underneath the second FET into additional interfacial oxide.

View all claims
  • 5 Assignments
Timeline View
Assignment View
    ×
    ×