In-situ ozone cure for radical-component CVD
First Claim
1. A method of forming a silicon-and-oxygen-containing layer on a substrate in a substrate processing region in a substrate processing chamber, the method comprising:
- forming a silicon-and-nitrogen-containing layer on the substrate in the substrate processing region, wherein forming the silicon-and-nitrogen-containing layer comprises;
flowing a stable gas into a plasma region to produce plasma effluents,combining a silicon-containing precursor with the plasma effluents in the plasma-free substrate processing region, wherein the silicon-containing precursor is carbon-free, anddepositing a silicon-and-nitrogen-containing layer on the substrate; and
curing the silicon-and-nitrogen-containing layer in an ozone-containing atmosphere in the same substrate processing region in the substrate processing chamber to form the silicon-and- oxygen-containing layer, wherein a substrate temperature during the curing operation is less than 50°
C. higher than a substrate temperature during the operation of depositing the silicon-and-nitrogen-containing layer.
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Abstract
Methods of forming a dielectric layer are described. The methods include the steps of mixing a silicon-containing precursor with a plasma effluent, and depositing a silicon-and-nitrogen-containing layer on a substrate. The silicon-and-nitrogen-containing layer is converted to a silicon-and-oxygen-containing layer by curing in an ozone-containing atmosphere in the same substrate processing region used for depositing the silicon-and-nitrogen-containing layer. Another silicon-and-nitrogen-containing layer may be deposited on the silicon-and-oxygen-containing layer and the stack of layers may again be cured in ozone all without removing the substrate from the substrate processing region. After an integral multiple of dep-cure cycles, the conversion of the stack of silicon-and-oxygen-containing layers may be annealed at a higher temperature in an oxygen-containing environment.
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Citations
18 Claims
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1. A method of forming a silicon-and-oxygen-containing layer on a substrate in a substrate processing region in a substrate processing chamber, the method comprising:
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forming a silicon-and-nitrogen-containing layer on the substrate in the substrate processing region, wherein forming the silicon-and-nitrogen-containing layer comprises; flowing a stable gas into a plasma region to produce plasma effluents, combining a silicon-containing precursor with the plasma effluents in the plasma-free substrate processing region, wherein the silicon-containing precursor is carbon-free, and depositing a silicon-and-nitrogen-containing layer on the substrate; and curing the silicon-and-nitrogen-containing layer in an ozone-containing atmosphere in the same substrate processing region in the substrate processing chamber to form the silicon-and- oxygen-containing layer, wherein a substrate temperature during the curing operation is less than 50°
C. higher than a substrate temperature during the operation of depositing the silicon-and-nitrogen-containing layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18)
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Specification