×

In-situ ozone cure for radical-component CVD

  • US 8,304,351 B2
  • Filed: 12/20/2010
  • Issued: 11/06/2012
  • Est. Priority Date: 01/07/2010
  • Status: Active Grant
First Claim
Patent Images

1. A method of forming a silicon-and-oxygen-containing layer on a substrate in a substrate processing region in a substrate processing chamber, the method comprising:

  • forming a silicon-and-nitrogen-containing layer on the substrate in the substrate processing region, wherein forming the silicon-and-nitrogen-containing layer comprises;

    flowing a stable gas into a plasma region to produce plasma effluents,combining a silicon-containing precursor with the plasma effluents in the plasma-free substrate processing region, wherein the silicon-containing precursor is carbon-free, anddepositing a silicon-and-nitrogen-containing layer on the substrate; and

    curing the silicon-and-nitrogen-containing layer in an ozone-containing atmosphere in the same substrate processing region in the substrate processing chamber to form the silicon-and- oxygen-containing layer, wherein a substrate temperature during the curing operation is less than 50°

    C. higher than a substrate temperature during the operation of depositing the silicon-and-nitrogen-containing layer.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×