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Microstructured pattern inspection method

  • US 8,304,724 B2
  • Filed: 08/02/2010
  • Issued: 11/06/2012
  • Est. Priority Date: 10/07/1999
  • Status: Expired due to Term
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1. A measurement apparatus to measure a dimension relating to a pattern formed on a specimen based on a detected signal from a scanning electron microscope, wherein the measurement apparatus is constituted to measure a misalignment between a first center of an inner pattern and a second center of an outer pattern, the inner pattern and the outer pattern being positioned at the same layer of the specimen.

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