Charged particle beam system

• US 8,304,725 B2
• Filed: 11/11/2010
• Issued: 11/06/2012
• Est. Priority Date: 03/23/2006
• Status: Active Grant

• Current Assignee: Hitachi High-Tech Company Limited (Hitachi, Ltd.)
• Original Assignee: Hitachi High-Technologies Corporation (Hitachi, Ltd.)
• Inventors: Komuro, Osamu, Nasu, Osamu
• Primary Examiner(s): MASKELL, MICHAEL P
• Application Number:
  US12/944,434
• Publication Number:
  US 20110057101A1
• Time in Patent Office: 726 Days
• Field of Search: 250/306, 250/307, 250/310, 250/311
• US Class Current: 250/310
• CPC Class Codes: H01J 2237/047 Changing particle velocity
• CPC Class Codes: H01J 2237/2008 specially adapted for studying electrical or magnetical properties of objects
• CPC Class Codes: H01J 2237/2803 characterised by the imaging method
• CPC Class Codes: H01J 37/268 with scanning beams

Abstract

A charged particle beam system wherein the output of the secondary electron detector is detected while the retarding voltage is varied between the values for which the secondary electrons do not reach the sample and the values for which the secondary electrons reach the sample, and the surface potential of the sample is determined on the basis of the relationship between the retarding voltage and the detected output of the secondary electron detector.

Claims

1. A scanning electron microscope comprising:

a source of an electron beam;

an acceleration electrode for accelerating the electron beam;

a detector for detecting a signal generated based on an irradiation of the electron beam to a sample;

a negative voltage generator for applying a variable potential to the sample; and

a controller for controlling a plurality of voltage generators which include the negative voltage generator, the controller comprising a computer readable medium containing instructions, wherein the controller;

varies energy of electrons accelerated toward the source side by-an electric field formed by potential applied to the sample, in a potential state of the sample to which a potential larger than energy of the electron beam is given, and

measures a surface potential of the sample in accordance with change of detectable amount of electrons by change of the energy of the electrons or change of brightness information by the signal.

2. A scanning electron microscope according to claim 1, wherein the controller measures the surface potential of the sample in accordance with change of an average brightness value of an image formed on the basis of the signal.

3. A scanning electron microscope according to claim 1, wherein the controller measures the surface potential of the sample in accordance with a potential at which the brightness of an image formed on the basis of the signal is not larger than a predetermined value.

4. A scanning electron microscope according to claim 1, wherein the controller varies in stepwise fashion the energy of the electrons accelerated toward the source side and measures the surface potential of the sample in accordance with the change of the detectable amount of electrons by the change of the energy of the electrons or the change of the brightness information by the signal.

5. A scanning electron microscope according to claim 1, wherein the controller controls the negative voltage generator in order to offset a voltage corresponding to the measured surface potential of the sample.

6. A scanning electron microscope comprising:

a source of an electron beam;

an acceleration electrode for accelerating the electron beam;

a detector for detecting a signal generated based on an irradiation of the electron beam to a sample;

a negative voltage generator for applying a variable potential to the sample; and

a controller for controlling a plurality of voltage generators which include the negative voltage generator, the controller comprising a computer readable medium containing instructions, wherein the controller;

varies energy of electrons accelerated toward the source side by an electric field formed by potential applied to the sample, in a potential state of the sample to which a potential larger than energy of the electron beam is given, and

controls a potential which is applied to the sample in accordance with change of detectable amount of electrons by change of the energy of the electrons or change of brightness information by the signal.

7. A scanning electron microscope according to claim 6, wherein the controller controls the potential which is applied to the sample on the basis of change of average brightness of an image formed by the signal.

8. A scanning electron microscope according to claim 6, wherein the controller controls the potential which is applied to the sample on the basis of a potential at which the brightness of an image formed on the basis of the signal is not larger than a predetermined value.

9. A scanning electron microscope according to claim 6, wherein the controller varies in stepwise fashion the energy of the electrons accelerated toward the source side and controls the potential which is applied to the sample in accordance with the change of the detectable amount of electrons by the change of the energy of the electrons or the change of the brightness information by the signal.