Active matrix substrate having channel protection film covering transistor channel, and display apparatus and/or, television receiver including same
First Claim
1. An active matrix substrate comprising:
- a transistor;
a pixel electrode electrically connected to the transistor;
a conductor provided in a layer below the pixel electrode and an insulating film interposed between at least the pixel electrode and the conductor, the pixel electrode overlapping the conductor;
wherein the insulating film comprises a thin section and a non-thin section which is thicker than the thin section;
wherein the pixel electrode includes (a) a part overlapping the thin section and the conductor, and (b) a part overlapping the non-thin section and the conductor, and wherein no other electrode is located between the pixel electrode and the conductor in the area where the pixel electrode overlaps the thin section;
wherein (i) the thin section includes a part of a gate insulating film and a part of a channel protection film that contact with each other, and (ii) the non-thin section includes another part of said gate insulating film and another part of said channel protection film that contact with each other, and (iii) said gate insulating film covers a gate electrode of the transistor, and (iv) said channel protection film covers a channel of the transistor, and wherein said gate insulating film that is present in both the non-thin section and the thin section is also provided in the transistor between at least the gate electrode and a drain electrode of the transistor; and
wherein the thin section is formed so that the non-thin section surrounds the thin section.
1 Assignment
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Accused Products
Abstract
An active matrix substrate of the present invention is arranged so that each pixel area has a transistor and a capacity electrode which is able to function as an electrode of a capacity. The active matrix substrate includes a conductor which is provided in a layer below the capacity electrode and is able to function as the other electrode of the capacity. The gate electrode of each transistor and a gate insulating film covering the conductor have a thin section with reduced thickness, in an on-conductor area overlapping the conductor. At least a part of the thin section overlaps the capacity electrode. In this way, the active matrix substrate which can reduce inconsistency in capacitance values of capacities (e.g. a storage capacitor, a capacity for controlling an electric potential of a pixel electrode, and a capacity which can function as both of them) provided in the substrate.
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Citations
15 Claims
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1. An active matrix substrate comprising:
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a transistor; a pixel electrode electrically connected to the transistor; a conductor provided in a layer below the pixel electrode and an insulating film interposed between at least the pixel electrode and the conductor, the pixel electrode overlapping the conductor; wherein the insulating film comprises a thin section and a non-thin section which is thicker than the thin section; wherein the pixel electrode includes (a) a part overlapping the thin section and the conductor, and (b) a part overlapping the non-thin section and the conductor, and wherein no other electrode is located between the pixel electrode and the conductor in the area where the pixel electrode overlaps the thin section; wherein (i) the thin section includes a part of a gate insulating film and a part of a channel protection film that contact with each other, and (ii) the non-thin section includes another part of said gate insulating film and another part of said channel protection film that contact with each other, and (iii) said gate insulating film covers a gate electrode of the transistor, and (iv) said channel protection film covers a channel of the transistor, and wherein said gate insulating film that is present in both the non-thin section and the thin section is also provided in the transistor between at least the gate electrode and a drain electrode of the transistor; and wherein the thin section is formed so that the non-thin section surrounds the thin section. - View Dependent Claims (9, 10)
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2. An active matrix substrate comprising:
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a transistor; a pixel electrode electrically connected to the transistor; a conductor provided in a layer below the pixel electrode and an insulating film interposed between at least the pixel electrode and the conductor, the pixel electrode overlapping the conductor; wherein the insulating film comprises a thin section and a non-thin section which is thicker than the thin section; wherein the pixel electrode includes (a) a part overlapping the thin section and the conductor, and (b) a part overlapping the non-thin section and the conductor; wherein (i) the thin section includes a part of a gate insulating film and a part of a channel protection film that contact with each other, and (ii) the non-thin section includes another part of said gate insulating film and another part of said channel protection film that contact with each other, and (iii) said gate insulating film covers a gate electrode of the transistor, and (iv) said channel protection film covers a channel of the transistor, and wherein said gate insulating film that is present in both the non-thin section and the thin section is also provided in the transistor between at least the gate electrode and a drain electrode of the transistor; wherein the pixel electrode overlaps the entirety of the thin section; and wherein the conductor is a storage capacity wiring not proximate a gate of the transistor.
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3. An active matrix substrate comprising:
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a transistor; a pixel electrode electrically connected to the transistor; a conductor provided in a layer below the pixel electrode and an insulating film interposed between at least the pixel electrode and the conductor, the pixel electrode overlapping the conductor; wherein the insulating film comprises a thin section and a non-thin section which is thicker than the thin section; wherein the pixel electrode includes (a) a part overlapping the thin section and the conductor, and (b) a part overlapping the non-thin section and the conductor; wherein (i) the thin section includes a part of a gate insulating film and a part of a channel protection film that contact with each other, and (ii) the non-thin section includes another part of said gate insulating film and another part of said channel protection film that contact with each other, and (iii) said gate insulating film covers a gate electrode of the transistor, and (iv) said channel protection film covers a channel of the transistor, and wherein said gate insulating film that is present in both the non-thin section and the thin section is also provided in the transistor between at least the gate electrode and a drain electrode of the transistor; and wherein the pixel electrode is electrically connected with a drain electrode of the transistor.
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4. An active matrix substrate comprising:
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a transistor; a pixel electrode electrically connected to the transistor; a conductor provided in a layer below the pixel electrode and an insulating film interposed between at least the pixel electrode and the conductor, the pixel electrode overlapping the conductor; wherein the insulating film comprises a thin section and a non-thin section which is thicker than the thin section; wherein the pixel electrode includes (a) a part overlapping the thin section and the conductor, and (b) a part overlapping the non-thin section and the conductor; wherein (i) the thin section includes a part of a gate insulating film and a part of a channel protection film that contact with each other, and (ii) the non-thin section includes another part of said gate insulating film and another part of said channel protection film that contact with each other, and (iii) said gate insulating film covers a gate electrode of the transistor, and (iv) said channel protection film covers a channel of the transistor, and wherein said gate insulating film that is present in both the non-thin section and the thin section is also provided in the transistor between at least the gate electrode and a drain electrode of the transistor; and wherein the conductor is part of a storage capacity wiring. - View Dependent Claims (7, 8)
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5. An active matrix substrate comprising:
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a transistor; a pixel electrode electrically connected to the transistor; a conductor provided in a layer below the pixel electrode and an insulating film interposed between at least the pixel electrode and the conductor, the pixel electrode overlapping the conductor; wherein the insulating film comprises a thin section and a non-thin section which is thicker than the thin section; wherein the pixel electrode includes (a) a part overlapping the thin section and the conductor, and (b) a part overlapping the non-thin section and the conductor; wherein (i) the thin section includes a part of a gate insulating film and a part of a channel protection film that contact with each other, and (ii) the non-thin section includes another part of said gate insulating film and another part of said channel protection film that contact with each other, and (iii) said gate insulating film covers a gate electrode of the transistor, and (iv) said channel protection film covers a channel of the transistor, and wherein said gate insulating film that is present in both the non-thin section and the thin section is also provided in the transistor between at least the gate electrode and a drain electrode of the transistor; and wherein a flattening film is provided at the non-thin section, the flattening film being ablated at the thin section.
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6. An active matrix substrate comprising:
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a transistor; a pixel electrode electrically connected to the transistor; a conductor provided in a layer below the pixel electrode and an insulating film interposed between at least the pixel electrode and the conductor, the pixel electrode overlapping the conductor; wherein the insulating film comprises a thin section and a non-thin section which is thicker than the thin section; wherein the pixel electrode includes (a) a part overlapping the thin section and the conductor, and (b) a part overlapping the non-thin section and the conductor; wherein (i) the thin section includes a part of a gate insulating film and a part of a channel protection film that contact with each other, and (ii) the non-thin section includes another part of said gate insulating film and another part of said channel protection film that contact with each other, and (iii) said gate insulating film covers a gate electrode of the transistor, and (iv) said channel protection film covers a channel of the transistor, and wherein said gate insulating film that is present in both the non-thin section and the thin section is also provided in the transistor between at least the gate electrode and a drain electrode of the transistor; and wherein SOG (spin on glass) film comprising SOG material is included at the non-thin section, the SOG film is ablated at the thin section.
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11. An active matrix substrate comprising:
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a transistor; a first pixel electrode electrically connected to the transistor; a first conductor provided in a layer below the first pixel electrode and an insulating film interposed between at least the first pixel electrode and the first conductor, the first pixel electrode overlapping the first conductor; a second pixel electrode; a second conductor provided in a layer below the second pixel electrode and an insulating film interposed between at least the second pixel electrode and the second conductor, the second pixel electrode overlapping the second conductor; wherein the first and second pixel electrodes are provided so as to correspond to a pixel; wherein the insulating film comprises a thin section and a non-thin section which is thicker than the thin section; wherein the first pixel electrode includes (a) a part overlapping the thin section and the first conductor, and (b) a part overlapping the non-thin section and the first conductor; and wherein (i) the thin section includes a part of a gate insulating film and a part of a channel protection film that contact with each other, and (ii) the non-thin section includes another part of said gate insulating film and another part of said channel protection film that contact with each other, and (iii) said gate insulating film covers a gate electrode of the transistor, and (iv) said channel protection film covers a channel of the transistor, and wherein said gate insulating film that is present in both the non-thin section and the thin section is also provided in the transistor between at least the gate electrode and a drain electrode of the transistor. - View Dependent Claims (12, 13, 14, 15)
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Specification