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Oxide semiconductor thin-film transistor

  • US 8,304,773 B2
  • Filed: 11/27/2008
  • Issued: 11/06/2012
  • Est. Priority Date: 12/04/2007
  • Status: Active Grant
First Claim
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1. A thin film transistor comprising a gate electrode, a gate insulating layer, a semiconductor layer, source-drain electrodes, and a protective layer,wherein the semiconductor layer comprises a first region and a second region,wherein the first region overlaps with the source-drain electrodes,wherein the second region does not overlap with the source-drain electrodes,wherein the first region comprises a metal crystal, and the second region comprises an amorphous oxide, andwherein the metal crystal contains a metal contained in the amorphous oxide.

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