Printed dopant layers

• US 8,304,780 B2
• Filed: 06/09/2010
• Issued: 11/06/2012
• Est. Priority Date: 08/15/2006
• Status: Active Grant

• Current Assignee: Ensurge Micropower ASA
• Original Assignee: Kovio Incorporated (Ensurge Micropower ASA)
• Inventors: Kamath, Arvind, Cleeves, James Montague, Rockenberger, Joerg, Smith, Patrick, Zürcher, Fabio
• Primary Examiner(s): SARKAR, ASOK K
• Application Number:
  US12/797,274
• Publication Number:
  US 20100244133A1
• Time in Patent Office: 881 Days
• Field of Search: 257/66, 257/69, 257/262, 257/274, 257/338, 257/369, 257/E27.06, 257/E27.108, 257/E29.117, 257/E31.085
• US Class Current: 257/66
• CPC Class Codes: H01L 21/02211 the compound being a silane, e.g. disilane, methylsilane or chlorosilane
• CPC Class Codes: H01L 21/02288 printing, e.g. ink-jet printing per se B41J
• CPC Class Codes: H01L 21/02318 post-treatment
• CPC Class Codes: H01L 21/316 composed of oxides or glassy oxides or oxide based glass
• CPC Class Codes: H01L 21/3165 formed by oxidation H01L21/31691, H01L21/31695 take precedence
• CPC Class Codes: H01L 27/1285 using control of the annealing or irradiation parameters, e.g. using different scanning direction or intensity for different transistors
• CPC Class Codes: H01L 27/1292 using liquid deposition, e.g. printing
• CPC Class Codes: H01L 29/66757 Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
• CPC Class Codes: H01L 29/78621 with LDD structure or an extension or an offset region or characterised by the doping profile

Abstract

A method for making an electronic device, such as a MOS transistor, including the steps of forming a plurality of semiconductor islands on an electrically functional substrate, printing a first dielectric layer on or over a first subset of the semiconductor islands and optionally a second dielectric layer on or over a second subset of the semiconductor islands, and annealing. The first dielectric layer contains a first dopant, and the (optional) second dielectric layer contains a second dopant different from the first dopant. The dielectric layer(s), semiconductor islands and substrate are annealed sufficiently to diffuse the first dopant into the first subset of semiconductor islands and, when present, the second dopant into the second subset of semiconductor islands.

Claims

1. An electronic device, comprising:

a) a substrate comprising a plate, disc or sheet of a glass, ceramic or plastic, a foil, sheet or disc of a metal, or a laminated or layered combination thereof;

b) a plurality of physically isolated semiconductor islands on the substrate containing a diffusible dopant;

c) a doped dielectric layer in a pattern on or over the plurality of semiconductor islands and the substrate, the doped dielectric layer containing the diffusible dopant; and

d) a metal layer in electrical contact with the plurality of semiconductor islands.

2. The device of claim 1, wherein each of the semiconductor islands comprises a Group IVA element.

3. The device of claim 2, wherein the Group IVA element is Si.

4. The device of claim 1, further comprising a gate dielectric layer on or over each of at least a subset of the plurality of semiconductor islands.

5. The device of claim 4, further comprising a gate over each of the subset of the plurality of semiconductor islands and on each of the gate dielectric layers, wherein the doped dielectric layer is over the gates.

6. The device of claim 5, wherein the gates comprise aluminum, silver, gold, copper, palladium, tungsten, platinum, or molybdenum.

7. The device of claim 5, further comprising contact holes in the doped dielectric layer, exposing (i) at least part of an upper surface of one or more the gates and (ii) portions of one or more of the semiconductor islands on opposed sides of each of the one or more gates.

8. The device of claim 7, wherein the metal layer is in contact with the exposed upper surface(s) of the one or more gate(s) and with the exposed portions of the one or more semiconductor islands.

9. The device of claim 4, wherein the gate dielectric layer is formed by chemical vapor deposition, chemical bath deposition, liquid phase deposition, atomic layer deposition, or a combination thereof.

10. The device of claim 4, wherein the gate dielectric layer is formed by thermal oxidation.

11. The device of claim 1, wherein there are spaces between adjacent semiconductor islands and the doped dielectric layer is within the spaces between the adjacent semiconductor islands.

12. The device of claim 1, wherein the dielectric layer comprises a silicon oxide and a dopant selected from the group consisting of oxides and oxo compounds of phosphorous, boron, arsenic and antimony.

13. The device of claim 1, wherein the diffusible dopant comprises one or more inorganic oxophosphorous compounds or acids, phosphosilicates, phosphates, phosphonates, phosphinates, phosphines, organic oxophosphorous compounds and acids, alkyl- and/or arylphosphonic and/or -phosphinic acids, inorganic boron compounds or acids, borosilicates, borazoles or polymers thereof, boron halogenides, boranes, sila- and/or azaboranes, organic boron compounds or acids, arsinosilanes, or oxo- and/or aza-analogs thereof.

14. The device of claim 13, wherein the diffusible dopant comprises one or more inorganic oxophosphorous compounds or acids, phosphosilicates, phosphines, inorganic boron compounds or acids, borosilicates, boron halogenides, or boranes.

15. The device of claim 1, wherein the substrate comprises a plate, disc or sheet of a glass, ceramic or plastic.

16. The device of claim 1, wherein the substrate comprises a foil, sheet or disc of a metal.

17. The device of claim 16, wherein the substrate comprises a metal foil.

18. The device of claim 17, wherein the substrate further comprises a barrier layer on the metal foil.

19. The device of claim 1, comprising the laminated or layered combination of the substrate.

20. The device of claim 19, comprising the laminated or layered combination of the substrate with one or more planarization, insulator, barrier or surface energy modifying layers.