Element wafer and method for manufacturing the same
First Claim
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1. An element wafer comprising:
- a semiconductor wafer;
a film stacked on the semiconductor wafer; and
plural elements provided on a central region of the film stacked on the semiconductor wafer and laterally spaced from each other to be diced into separated elements;
whereina plurality of films including said film are stacked in the outer region of the semiconductor wafer, the outer region being located outside of the central region,a recessed portion and/or a plurality of openings are provided in at least one of the films stacked in the outer region of the semiconductor wafer, the recessed portion and/or the plurality of openings being arranged outside the central region and surrounding the central region, andno said elements are provided in the outer region of the semiconductor wafer extending from outside the central region to the peripheral edge of the wafer.
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Abstract
A recessed portion is provided in first and second insulating films, the first insulating film being stacked on a semiconductor wafer, the second insulating film being stacked on the first insulating film. The first and second insulating films are processed to form wiring in a formation region of the semiconductor wafer in which an acceleration sensor is to be formed. After a sacrificial film is stacked on the wiring and processed, a conductive film is stacked on the wiring and processed to form a plurality of thin film structures in the formation region. The recessed portion surrounds the formation region.
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Citations
9 Claims
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1. An element wafer comprising:
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a semiconductor wafer; a film stacked on the semiconductor wafer; and plural elements provided on a central region of the film stacked on the semiconductor wafer and laterally spaced from each other to be diced into separated elements;
whereina plurality of films including said film are stacked in the outer region of the semiconductor wafer, the outer region being located outside of the central region, a recessed portion and/or a plurality of openings are provided in at least one of the films stacked in the outer region of the semiconductor wafer, the recessed portion and/or the plurality of openings being arranged outside the central region and surrounding the central region, and no said elements are provided in the outer region of the semiconductor wafer extending from outside the central region to the peripheral edge of the wafer. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. An element wafer comprising:
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a semiconductor wafer; an insulating film stacked on the semiconductor wafer; plural pieces of wiring provided on a central region of the insulating film stacked on the semiconductor wafer; a sacrificial film stacked on the insulating film and the wiring and having a plurality of openings formed therein, the opening exposing the respective pieces of the wiring; and a plurality of thin film structures provided on the sacrificial film and connected with the respective pieces of the wiring through the openings, wherein recessed portions are provided in the sacrificial film to partition the thin film structures from each other, and the sacrificial film has a thickness at the recessed portion less than a thickness of the sacrificial film adjacent to the recessed portion.
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9. An element wafer, comprising:
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a semiconductor wafer; an insulating film stacked on the semiconductor wafer; plural pieces of wiring provided on a central region of the insulating film stacked on the semiconductor wafer; and a plurality of thin film structures provided on and connected with the respective pieces of the wiring, each of the plurality of thin film structures including at least one portion movable relative to the semiconductor wafer, wherein recessed portions are provided in the insulating film to partition the thin film structures from each other, and the insulating film has a thickness at the recessed portion less than a thickness of the film adjacent to the recessed portion.
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Specification