Thin film transistor array panel having improved storage capacitance and manufacturing method thereof
First Claim
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1. A thin film transistor array panel, comprising:
- a gate line;
a data line intersecting the gate line;
a storage electrode apart from the gate line and the data line;
a semiconductor disposed under the storage electrode and contacting the storage electrode;
a thin film transistor connected to the gate line and the data line and having a drain electrode formed of the same layer as the storage electrode;
a pixel electrode connected to the drain electrode and electrically separated from the storage electrode;
a first insulating layer over the storage electrode and the drain electrode and disposed under the pixel electrode;
a second insulating layer disposed on the first insulating layer, and having an opening exposing the first insulating layer on the storage electrode,a shielding electrode disposed in the same layer as the pixel electrode and transmitting a common voltage, the shielding electrode contacting the storage electrode,wherein the shielding electrode comprises a first portion extending along the data line and covering the data line.
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Abstract
A thin film transistor array panel is provided, which includes a gate line, a data line intersecting the gate line, a storage electrode apart from the gate and data lines, a thin film transistor connected to the gate and data lines and having a drain electrode, a pixel electrode connected to the drain electrode, a first insulating layer over the thin film transistor and disposed under the pixel electrode, and a second insulating layer disposed on the first insulating layer and having an opening exposing the first insulating layer on the storage electrode.
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Citations
18 Claims
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1. A thin film transistor array panel, comprising:
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a gate line; a data line intersecting the gate line; a storage electrode apart from the gate line and the data line; a semiconductor disposed under the storage electrode and contacting the storage electrode; a thin film transistor connected to the gate line and the data line and having a drain electrode formed of the same layer as the storage electrode; a pixel electrode connected to the drain electrode and electrically separated from the storage electrode; a first insulating layer over the storage electrode and the drain electrode and disposed under the pixel electrode; a second insulating layer disposed on the first insulating layer, and having an opening exposing the first insulating layer on the storage electrode, a shielding electrode disposed in the same layer as the pixel electrode and transmitting a common voltage, the shielding electrode contacting the storage electrode, wherein the shielding electrode comprises a first portion extending along the data line and covering the data line. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 17)
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10. A thin film transistor array panel, comprising:
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a gate line formed on an insulating substrate; a gate insulating layer formed on the gate line; a first semiconductor formed on the gate insulating layer; a data line and a drain electrode formed on the first semiconductor, the data line and the drain electrode being separate from each other; a storage conductor formed on the gate insulating layer and formed of the same layer as the drain electrode; a second semiconductor made at the same layer as the first semiconductor and disposed under the storage conductor and contacting the storage conductor; a first passivation layer formed on the storage conductor, the data line, and the drain electrode; a second passivation layer formed on the first passivation layer and having an opening exposing the first passivation layer corresponding to the storage conductor; a pixel electrode connected to the drain electrode and overlapping the storage conductor via the first passivation layer in the opening; a shielding electrode disposed in the same layer as the pixel electrode and transmitting a common voltage, the shielding electrode contacting the storage electrode, wherein the shielding electrode comprises a first portion extending along the data line and covering the data line. - View Dependent Claims (11, 12, 13, 14, 15, 16, 18)
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Specification