Showerhead for chemical vapor deposition and chemical vapor deposition apparatus having the same

• US 8,308,865 B2
• Filed: 10/09/2008
• Issued: 11/13/2012
• Est. Priority Date: 04/24/2008
• Status: Expired due to Fees

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Kim, Changsung Sean, Hong, Jong Pa, Lee, Kyung Ho
• Primary Examiner(s): Zervigon, Rudy
• Application Number:
  US12/248,367
• Publication Number:
  US 20090266911A1
• Time in Patent Office: 1,496 Days
• Field of Search: 118/715, 118/725, 156/345.33, 156/345.34, 156/345.37
• US Class Current: 118/715
• CPC Class Codes: C23C 16/45514 Mixing in close vicinity to the substrate
• CPC Class Codes: C23C 16/45565 Shower nozzles
• CPC Class Codes: C23C 16/45572 Cooled nozzles
• CPC Class Codes: C23C 16/45574 Nozzles for more than one gas

Abstract

A showerhead for chemical vapor deposition (CVD) includes a head storing reaction gas flowing thereinto and feeding the stored reaction gas to a reaction chamber, and at least one support member passing through and coupled with the head and the reaction chamber so as to support the head.

Claims

1. A showerhead for chemical vapor deposition comprising:

a head storing reaction gas flowing thereinto and feeding the stored reaction gas to a reaction chamber; and

at least one support member passing through and coupled with the head and an upper surface of the reaction chamber so as to support the head inside the reaction chamber and prevent the head from being bent downwards,

wherein the head includes;

a first head storing first reaction gas and spraying the first reaction gas downwards into the reaction chamber, the first head includes a first reservoir storing the first reaction gas, and at least one first spray nozzle feeding the reaction gas in the first reservoir to the reaction chamber;

a second head storing second reaction gas and spraying the second reaction gas downwards into the reaction chamber, the second head includes a second reservoir storing the second reaction gas, and at least one second spray nozzle having a predetermined size through which the first spray nozzle passes, and a gas channel formed between the second spray nozzle and the first spray nozzle passing through the second spray nozzle and feeding the second reaction gas in the second reservoir to the reaction chamber;

a third head installed above the upper surface of the reaction chamber, defining the first reservoir with the first head, and forming a cooling water channel between the third head and the upper surface of the reaction chamber; and

a cooling water inflow pipe passing through the third head and disposed in the support member such that cooling water flows from an outside into the cooling water channel,

wherein the gas channel includes a predetermined gap between an inner circumference of the second spray nozzle and an outer circumference of the first spray nozzle.

2. The showerhead of claim 1, wherein the first spray nozzle includes a gas pipe having at least one gas spray hole so as to spray the first reaction gas.

3. The showerhead of claim 1, wherein the second spray nozzle includes a hole of a predetermined size through which the first spray nozzle passes.

4. The showerhead of claim 1, wherein the first spray nozzle has a substantially same center as the second spray nozzle.

5. The showerhead of claim 1, wherein the first spray nozzle has a lower end that is substantially flush with a lower end of the second spray nozzle.

6. The showerhead of claim 1, wherein the support member includes:

a lower flange on which a bottom surface of the head is hooked;

a body having the lower flange at a lower end thereof and being shaped of a hollow cylinder; and

an upper flange formed at an upper end of the body, and hooked on an outer upper surface of the reaction chamber.

7. The showerhead of claim 1, wherein the support member is substantially symmetrical with respect to a center of the head and a center of the reaction chamber.

8. A chemical vapor deposition apparatus comprising:

a reaction chamber;

a head storing reaction gas flowing thereinto and feeding the stored reaction gas to the reaction chamber; and

at least one support member passing through and coupled with the head and an upper surface of the reaction chamber so as to support the head inside the reaction chamber and prevent the head from being bent downwards,

wherein the head includes;

a first head storing first reaction gas and spraying the first reaction gas downwards into the reaction chamber, the first head includes a first reservoir storing the first reaction gas, and at least one first spray nozzle feeding the reaction gas in the first reservoir to the reaction chamber;

a second head storing second reaction gas and spraying the second reaction gas downwards into the reaction chamber, the second head includes a second reservoir storing the second reaction gas, and at least one second spray nozzle having a predetermined size through which the first spray nozzle passes, and a gas channel formed between the second spray nozzle and the first spray nozzle passing through the second spray nozzle and feeding the second reaction gas in the second reservoir to the reaction chamber;

a third head installed above the upper surface of the reaction chamber, defining the first reservoir with the first head, and forming a cooling water channel between the third head and the upper surface of the reaction chamber; and

a cooling water inflow pipe passing through the third head and disposed in the support member such that cooling water flows from an outside into the cooling water channel,

wherein the gas channel includes a predetermined gap between an inner circumference of the second spray nozzle and an outer circumference of the first spray nozzle.

9. The chemical vapor deposition apparatus of claim 8, wherein the support member includes:

a lower flange on which a bottom surface of the head is hooked;

a body having the lower flange at a lower end thereof and being shaped of a hollow cylinder; and

an upper flange formed at an upper end of the body, and hooked on an outer upper surface of the reaction chamber.

10. The chemical vapor deposition apparatus of claim 8, wherein the support member is substantially symmetrical with respect to a center of the head and a center of the reaction chamber.