Systems and methods for magnetron deposition
First Claim
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1. A method for forming a non-planar complex metal oxide (CMO) target in a face target sputtering (FTS) chamber, comprising:
- providing one or more materials with differential coefficients of expansion in the FTS chamber, the materials forming two precision cylinders that are concentric to each other and have different coefficients of thermal expansion;
providing complex metal oxide between the two precision cylinders;
generating a controlled pressure and size with the one or more materials during sintering of the complex metal oxide in the FTS chamber; and
thus forming the non-planar complex metal oxide target;
wherein the FTS sputtering chamber includes;
an air-tight chamber in which an inert gas is admittable and exhaustible;
a facing magnetron; and
a substrate holder adapted to hold a substrate on which a thin film is to be deposited.
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Abstract
Systems and methods are disclosed for face target sputtering to fabricate semiconductors by providing one or more materials with differential coefficients of expansion in the FTS chamber; and generating a controlled pressure and size with the one or more materials during sintering.
263 Citations
19 Claims
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1. A method for forming a non-planar complex metal oxide (CMO) target in a face target sputtering (FTS) chamber, comprising:
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providing one or more materials with differential coefficients of expansion in the FTS chamber, the materials forming two precision cylinders that are concentric to each other and have different coefficients of thermal expansion; providing complex metal oxide between the two precision cylinders; generating a controlled pressure and size with the one or more materials during sintering of the complex metal oxide in the FTS chamber; and
thus forming the non-planar complex metal oxide target;wherein the FTS sputtering chamber includes; an air-tight chamber in which an inert gas is admittable and exhaustible; a facing magnetron; and a substrate holder adapted to hold a substrate on which a thin film is to be deposited. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A method of deposition, comprising:
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providing a face target sputtering system, the system comprising a face target sputtering chamber, and the face target sputtering chamber comprising; an air-tight chamber in which an inert gas is admittable and exhaustible; a facing magnetron; and a substrate holder adapted to hold a substrate on which a film is to be deposited; forming a non-planar complex metal oxide target, the target formed in the face target sputtering chamber by; providing one or more materials with differential coefficients of expansion in the FTS chamber, the materials forming two precision cylinders that are concentric to each other and have different coefficients of thermal expansion; providing complex metal oxide between the two precision cylinders; and generating a controlled pressure and size with the one or more materials during sintering of the complex metal oxide in the FTS chamber; and sputtering the non-planar complex metal oxide target, thus depositing metal oxide on the substrate. - View Dependent Claims (15, 16, 17, 18, 19)
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Specification